Depth resolved lattice-charge coupling in epitaxial BiFeO 3 thin film

Hyeon Jun Lee, Sung Su Lee, Jeong Hun Kwak, Young Min Kim, Hu Young Jeong, Albina Y. Borisevich, Su Yong Lee, Do Young Noh, Owoong Kwon, Yunseok Kim, Ji Young Jo

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Abstract

For epitaxial films, a critical thickness (t c) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the t c in BiFeO 3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO 3 /SrRuO 3 /SrTiO 3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO 3 film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.

Original languageEnglish
Article number38724
JournalScientific Reports
Volume6
DOIs
StatePublished - Dec 8 2016

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