Depth profiling of SiC lattice damage using micro-Raman spectroscopy

Iulia C. Muntele; Daryush Ila; Claudiu I. Muntele; David B. Poker; Dale K. Hensley

Depth profiling of SiC lattice damage using micro-Raman spectroscopy

Iulia C. Muntele, Daryush Ila, Claudiu I. Muntele, David B. Poker, Dale K. Hensley

Alabama A and M University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Depth profiling for the amount of lattice damage using a Confocal Micro-Raman (CMR) spectrometer is demonstrated in this paper. Samples of n-type silicon carbide were implanted with 2 MeV He and O ions at both room temperature and 500 °C, and fluences between 10¹⁵ and 10¹⁷ ions/cm². Post-implantation annealing at 1000 °C was also performed in order to study the damage evolution. Optical Absorption Spectrophotometry (OAS) was used for establishing the opacity (and therefore the probing depth) of the damaged layer to the 632.8 nm wavelength of the He-Ne laser used for CMR throughout this study. The methodology used and the results obtained are presented herein. Total dissipation of amorphous carbon islands was observed even at low annealing temperatures of the RT implanted samples, along with an increase in the size of the amorphous silicon islands.

Original language	English
Pages (from-to)	209-214
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	692
State	Published - 2002
Externally published	Yes
Event	Progress in Semiconductor Materials for Optoelectronic Applications - Boston, MA, United States Duration: Nov 26 2001 → Nov 29 2001

Cite this

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title = "Depth profiling of SiC lattice damage using micro-Raman spectroscopy",

abstract = "Depth profiling for the amount of lattice damage using a Confocal Micro-Raman (CMR) spectrometer is demonstrated in this paper. Samples of n-type silicon carbide were implanted with 2 MeV He and O ions at both room temperature and 500 °C, and fluences between 1015 and 1017 ions/cm2. Post-implantation annealing at 1000 °C was also performed in order to study the damage evolution. Optical Absorption Spectrophotometry (OAS) was used for establishing the opacity (and therefore the probing depth) of the damaged layer to the 632.8 nm wavelength of the He-Ne laser used for CMR throughout this study. The methodology used and the results obtained are presented herein. Total dissipation of amorphous carbon islands was observed even at low annealing temperatures of the RT implanted samples, along with an increase in the size of the amorphous silicon islands.",

author = "Muntele, {Iulia C.} and Daryush Ila and Muntele, {Claudiu I.} and Poker, {David B.} and Hensley, {Dale K.}",

year = "2002",

language = "English",

volume = "692",

pages = "209--214",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Progress in Semiconductor Materials for Optoelectronic Applications ; Conference date: 26-11-2001 Through 29-11-2001",

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TY - JOUR

T1 - Depth profiling of SiC lattice damage using micro-Raman spectroscopy

AU - Muntele, Iulia C.

AU - Ila, Daryush

AU - Muntele, Claudiu I.

AU - Poker, David B.

AU - Hensley, Dale K.

PY - 2002

Y1 - 2002

N2 - Depth profiling for the amount of lattice damage using a Confocal Micro-Raman (CMR) spectrometer is demonstrated in this paper. Samples of n-type silicon carbide were implanted with 2 MeV He and O ions at both room temperature and 500 °C, and fluences between 1015 and 1017 ions/cm2. Post-implantation annealing at 1000 °C was also performed in order to study the damage evolution. Optical Absorption Spectrophotometry (OAS) was used for establishing the opacity (and therefore the probing depth) of the damaged layer to the 632.8 nm wavelength of the He-Ne laser used for CMR throughout this study. The methodology used and the results obtained are presented herein. Total dissipation of amorphous carbon islands was observed even at low annealing temperatures of the RT implanted samples, along with an increase in the size of the amorphous silicon islands.

AB - Depth profiling for the amount of lattice damage using a Confocal Micro-Raman (CMR) spectrometer is demonstrated in this paper. Samples of n-type silicon carbide were implanted with 2 MeV He and O ions at both room temperature and 500 °C, and fluences between 1015 and 1017 ions/cm2. Post-implantation annealing at 1000 °C was also performed in order to study the damage evolution. Optical Absorption Spectrophotometry (OAS) was used for establishing the opacity (and therefore the probing depth) of the damaged layer to the 632.8 nm wavelength of the He-Ne laser used for CMR throughout this study. The methodology used and the results obtained are presented herein. Total dissipation of amorphous carbon islands was observed even at low annealing temperatures of the RT implanted samples, along with an increase in the size of the amorphous silicon islands.

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M3 - Conference article

AN - SCOPUS:0036056279

SN - 0272-9172

VL - 692

SP - 209

EP - 214

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Progress in Semiconductor Materials for Optoelectronic Applications

Y2 - 26 November 2001 through 29 November 2001

ER -

Depth profiling of SiC lattice damage using micro-Raman spectroscopy

Abstract

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