TY - GEN
T1 - Deposition of triso particles with superhard sic coatings and the characterization of anisotropy by raman spectroscopy
AU - López-Honorato, Eddie
AU - Meadows, Philippa J.
AU - Tan, Jun
AU - Xiang, Yang
AU - Xiao, Ping
PY - 2009
Y1 - 2009
N2 - In this work we have deposited SiC at 1300°C with the addition of small amounts of propylene. The use of propylene and high concentrations of methyltnchlorosilane (9 vol%) allowed the deposition of superhard SiC coatings (42 GPa). The superhard SiC could result from the presence of a SiC-C solid solution, undetectable by X-ray diffraction but visible by Raman spectroscopy. Another sample obtained by the use of 50 vol% Argon, also showed the formation of SiC with good properties. The use of a flat substrate together with the particles showed the importance of carrying out the analysis on actual particles rather than in flat substrates. We show that it is possible to characterize the anisotropy of PyC by Raman spectroscopy.
AB - In this work we have deposited SiC at 1300°C with the addition of small amounts of propylene. The use of propylene and high concentrations of methyltnchlorosilane (9 vol%) allowed the deposition of superhard SiC coatings (42 GPa). The superhard SiC could result from the presence of a SiC-C solid solution, undetectable by X-ray diffraction but visible by Raman spectroscopy. Another sample obtained by the use of 50 vol% Argon, also showed the formation of SiC with good properties. The use of a flat substrate together with the particles showed the importance of carrying out the analysis on actual particles rather than in flat substrates. We show that it is possible to characterize the anisotropy of PyC by Raman spectroscopy.
UR - http://www.scopus.com/inward/record.url?scp=70349871555&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:70349871555
SN - 9780791848548
T3 - 2008 Proceedings of the 4th International Topical Meeting on High Temperature Reactor Technology, HTR 2008
SP - 231
EP - 235
BT - 2008 Proceedings of the 4th International Topical Meeting on High Temperature Reactor Technology, HTR 2008
T2 - 2008 4th International Topical Meeting on High Temperature Reactor Technology, HTR 2008
Y2 - 28 September 2008 through 1 October 2008
ER -