Deposition of TiO 2 passivation layer by plasma enhanced chemical vapor deposition between the transparent conducting oxide and mesoporous TiO 2 electrode in dye sensitized solar cells

Su Young Lee, Sang Ho Kim

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Abstract

The characteristic of TiO 2 passivation layers grown by plasma enhanced chemical vapor deposition as a function of its thickness on F-doped SnO2 (FTO) electrode was investigated. The thickness of TiO 2 passivation layer was varied from 30 to 200nm by controlling the deposition time. The electric resistance of the TiO 2 layers was depended on the thickness, so the optimized thickness in enhancing the connection and reducing the recombination of electrons on the surface of FTO electrode was determined. The dye sensitized solar cells fabricated with 40nm thick TiO 2 passivation layer showed the maximum power conversion efficiency of 6.93%. It was due to the effective connection of mesoporous TiO 2 and FTO and the prevention of electron recombination from the FTO to electrolyte. The reduced resistance, enlarged electron diffusion length measured by the electrochemical impedance spectroscopy, intensity-modulated photocurrent spectroscopy and intensity-modulated photovoltage spectroscopy identified the connection and anti-recombination effect.

Original languageEnglish
Article number10NE19
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume51
Issue number10 PART 2
DOIs
StatePublished - Oct 2012
Externally publishedYes

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