Deposition and dielectric characterization of highly oriented V2O5 thin films

Leonard Jacques; Smitha Shetty; Fernando Josue Vega; Yongtao Liu; Benjamin Aronson; Thomas Beechem; Susan Trolier-McKinstry

doi:10.1557/s43579-023-00502-7

Deposition and dielectric characterization of highly oriented V₂O₅ thin films

Leonard Jacques, Smitha Shetty, Fernando Josue Vega, Yongtao Liu, Benjamin Aronson, Thomas Beechem, Susan Trolier-McKinstry

Data Nanoanalytics

Research output: Contribution to journal › Article › peer-review

Abstract

The possibility of ferroelectricity in orthorhombic V₂O₅ thin films was investigated. Films were deposited via either a chemical solution deposition (CSD) route or by RF magnetron sputtering. Highly (001) oriented V₂O₅ films were achieved with both deposition routes at temperatures as low as 300°C. No evidence for ferroelectricity was observed, even in films which had been doped to provide local nuclei for polarization reversal. Loss originated from mid-gap trap states stemming from oxygen vacancies that were observed with photoluminescence, supplemented by piezoresponse force microscopy measurements. These trap states may have helped mimic ferroelectricity in previous reports on V₂O₅. Graphical abstract: (Figure presented.).

Original language	English
Pages (from-to)	76-81
Number of pages	6
Journal	MRS Communications
Volume	14
Issue number	1
DOIs	https://doi.org/10.1557/s43579-023-00502-7
State	Published - Feb 2024

Funding

This material is based upon work supported by the Center for 3D Ferroelectric Microelectronics (3DFeM), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences Energy Frontier Research Centers Program under Award Number DE-SC0021118.

Keywords

Defects
Dielectric properties
Sol–gel
Spectroscopy
Sputtering
Thin film

Access to Document

10.1557/s43579-023-00502-7

Cite this

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abstract = "The possibility of ferroelectricity in orthorhombic V2O5 thin films was investigated. Films were deposited via either a chemical solution deposition (CSD) route or by RF magnetron sputtering. Highly (001) oriented V2O5 films were achieved with both deposition routes at temperatures as low as 300°C. No evidence for ferroelectricity was observed, even in films which had been doped to provide local nuclei for polarization reversal. Loss originated from mid-gap trap states stemming from oxygen vacancies that were observed with photoluminescence, supplemented by piezoresponse force microscopy measurements. These trap states may have helped mimic ferroelectricity in previous reports on V2O5. Graphical abstract: (Figure presented.).",

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AU - Jacques, Leonard

AU - Shetty, Smitha

AU - Vega, Fernando Josue

AU - Liu, Yongtao

AU - Aronson, Benjamin

AU - Beechem, Thomas

AU - Trolier-McKinstry, Susan

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KW - Sputtering

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