Deposited low temperature silicon GHz modulator

Yoon Ho Daniel Lee; Michael O. Thompson; Michal Lipson

Deposited low temperature silicon GHz modulator

Yoon Ho Daniel Lee
, Michael O. Thompson
, Michal Lipson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate multi gigahertz polysilicon electro-optic modulator fabricated using low temperature excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2013
Pages	CTu2F.5
State	Published - 2013
Externally published	Yes
Event	CLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States Duration: Jun 9 2013 → Jun 14 2013

Publication series

Name	CLEO: Science and Innovations, CLEO_SI 2013

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2013
Country/Territory	United States
City	San Jose, CA
Period	06/9/13 → 06/14/13

Cite this

@inproceedings{dfe211caaebb4a7d8ca8b24576496117,

title = "Deposited low temperature silicon GHz modulator",

abstract = "We demonstrate multi gigahertz polysilicon electro-optic modulator fabricated using low temperature excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved.",

author = "Lee, \{Yoon Ho Daniel\} and Thompson, \{Michael O.\} and Michal Lipson",

year = "2013",

language = "English",

isbn = "9781557529725",

series = "CLEO: Science and Innovations, CLEO\_SI 2013",

pages = "CTu2F.5",

booktitle = "CLEO",

note = "CLEO: Science and Innovations, CLEO\_SI 2013 ; Conference date: 09-06-2013 Through 14-06-2013",

}

TY - GEN

T1 - Deposited low temperature silicon GHz modulator

AU - Lee, Yoon Ho Daniel

AU - Thompson, Michael O.

AU - Lipson, Michal

PY - 2013

Y1 - 2013

N2 - We demonstrate multi gigahertz polysilicon electro-optic modulator fabricated using low temperature excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved.

AB - We demonstrate multi gigahertz polysilicon electro-optic modulator fabricated using low temperature excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved.

UR - https://www.scopus.com/pages/publications/84887448661

M3 - Conference contribution

AN - SCOPUS:84887448661

SN - 9781557529725

T3 - CLEO: Science and Innovations, CLEO_SI 2013

SP - CTu2F.5

BT - CLEO

T2 - CLEO: Science and Innovations, CLEO_SI 2013

Y2 - 9 June 2013 through 14 June 2013

ER -

Deposited low temperature silicon GHz modulator

Abstract

Publication series

Conference

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