Abstract
We demonstrate gigahertz electro-optic modulator fabricated on low temperature polysilicon using excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved. These results open up an array of possibilities for silicon photonics including photonics on DRAM and on flexible substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 26688-26692 |
| Number of pages | 5 |
| Journal | Optics Express |
| Volume | 21 |
| Issue number | 22 |
| DOIs | |
| State | Published - Nov 4 2013 |
| Externally published | Yes |