Deposited low temperature silicon GHz modulator

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We demonstrate gigahertz electro-optic modulator fabricated on low temperature polysilicon using excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved. These results open up an array of possibilities for silicon photonics including photonics on DRAM and on flexible substrates.

Original languageEnglish
Pages (from-to)26688-26692
Number of pages5
JournalOptics Express
Volume21
Issue number22
DOIs
StatePublished - Nov 4 2013
Externally publishedYes

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