Dependence of threshold current density on the stacked quantum dot layers

Yongqiang Ning; Xin Gao; Yun Liu; Lijun Wang; Peter Smowton; Peter Blood

doi:10.1117/12.445005

Dependence of threshold current density on the stacked quantum dot layers

Yongqiang Ning, Xin Gao, Yun Liu, Lijun Wang, Peter Smowton, Peter Blood

Research output: Contribution to journal › Article › peer-review

Abstract

Lasers based on InGaAs/(Ga, Al)As stacked QDs layers are fabricated. The performance of the quantum dots laser is dependent on the detailed design of the active region. The threshold current density is greatly decreased by the use of multiple-layer quantum dots, coupled dots layers, or barriers with wide band gap. An average threshold current density of about 20A/cm² is achieved for the laser with the width of 15μm.

Original language	English
Pages (from-to)	512-515
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4580
DOIs	https://doi.org/10.1117/12.445005
State	Published - 2001
Externally published	Yes

Keywords

InGaAs/GaAs
Quantum dots
Threshold current density

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10.1117/12.445005

Cite this

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title = "Dependence of threshold current density on the stacked quantum dot layers",

abstract = "Lasers based on InGaAs/(Ga, Al)As stacked QDs layers are fabricated. The performance of the quantum dots laser is dependent on the detailed design of the active region. The threshold current density is greatly decreased by the use of multiple-layer quantum dots, coupled dots layers, or barriers with wide band gap. An average threshold current density of about 20A/cm2 is achieved for the laser with the width of 15μm.",

keywords = "InGaAs/GaAs, Quantum dots, Threshold current density",

author = "Yongqiang Ning and Xin Gao and Yun Liu and Lijun Wang and Peter Smowton and Peter Blood",

year = "2001",

doi = "10.1117/12.445005",

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volume = "4580",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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T1 - Dependence of threshold current density on the stacked quantum dot layers

AU - Ning, Yongqiang

AU - Gao, Xin

AU - Liu, Yun

AU - Wang, Lijun

AU - Smowton, Peter

AU - Blood, Peter

PY - 2001

Y1 - 2001

N2 - Lasers based on InGaAs/(Ga, Al)As stacked QDs layers are fabricated. The performance of the quantum dots laser is dependent on the detailed design of the active region. The threshold current density is greatly decreased by the use of multiple-layer quantum dots, coupled dots layers, or barriers with wide band gap. An average threshold current density of about 20A/cm2 is achieved for the laser with the width of 15μm.

AB - Lasers based on InGaAs/(Ga, Al)As stacked QDs layers are fabricated. The performance of the quantum dots laser is dependent on the detailed design of the active region. The threshold current density is greatly decreased by the use of multiple-layer quantum dots, coupled dots layers, or barriers with wide band gap. An average threshold current density of about 20A/cm2 is achieved for the laser with the width of 15μm.

KW - InGaAs/GaAs

KW - Quantum dots

KW - Threshold current density

UR - http://www.scopus.com/inward/record.url?scp=0035776269&partnerID=8YFLogxK

U2 - 10.1117/12.445005

DO - 10.1117/12.445005

M3 - Article

AN - SCOPUS:0035776269

SN - 0277-786X

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Dependence of threshold current density on the stacked quantum dot layers

Abstract

Keywords

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