Abstract
Large-size vertical β-Ga2O3 Schottky barrier diodes (SBDs) with various device areas were demonstrated on a Si-doped n-type drift layer grown by hydride vapor phase epitaxy (HVPE) on bulk Sn-doped (001) n-type β-Ga2O3 substrate. In this letter, the devices have two circular contacts with a diameter of 1500 and 500 μm and two square contacts with dimensions of 1600 × 1600 μm2 and 800 × 800 μm2, corresponding to the area of 0.2 × 10-2 cm2 (the smallest device), 0.6 × 10-2, 1.8 × 10-2, and 2.6 × 10-2 cm2 (the largest device). The breakdown voltage (BV) was determined to be -261 V for the largest device and -427 V for the smallest device. Also, the ideality factor (η) of vertical Ga2O3 SBDs with different device areas exhibited the same value of 1.07, except for the largest device area of 2.6 × 10-2 cm2 with an ideality factor of 1.21. At an applied forward bias of VF= 2 V, the specific on-state resistance (RonA) of all the Ga2O3 SBDs remains relatively low with values ranging from 1.43 × 10-2 Ω cm2 to 7.73 × 10-2 Ω cm2. The measured turn-on voltage (Von) of all the SBDs remains low with a narrow distribution.
| Original language | English |
|---|---|
| Article number | 9113734 |
| Pages (from-to) | 41-44 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 36 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2021 |
Funding
Manuscript received April 22, 2020; revised May 20, 2020; accepted June 4, 2020. Date of publication June 10, 2020; date of current version September 4, 2020. This work was supported in part by the Laboratory Directed Research and Development (LDRD) program of the Oak Ridge National Laboratory, in part by the US Department of Energy/National Nuclear Security Administration under Award no. DE-NA0003921, and in part by the Center for Nanophase Materials Sciences, US Department of Energy Office of Science User Facility. The work of Neil Taylor was supported under an Integrated University Program Graduate Fellowship. (Co-corresponding author: M. Parans Paranthaman.) Mihee Ji and M. Parans Paranthaman are with the Materials Chemistry Group Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA (e-mail: [email protected]; [email protected]). The authors would like to thank UT-Battelle, LLC, under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting this letter for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan).
| Funders | Funder number |
|---|---|
| Center for Nanophase Materials Sciences | |
| US Department of Energy | |
| US Department of Energy Office of Science | |
| US Department of Energy/National Nuclear Security Administration | DE-NA0003921 |
| UT-Battelle, LLC | DE-AC05-00OR22725 |
| U.S. Department of Energy | |
| Oak Ridge National Laboratory |
Keywords
- Gallium oxide (Ga2O3)
- Schottky barrier diodes (SBDs)
- high breakdown voltage (BV)
- large size