Degradation of TiN coatings on Inconel 617 and silicon wafer substrates under pulsed laser ablation

The degradation behavior of TiN coatings on Inconel 617 and silicon (Si) wafer substrates was compared following Nd:YAG pulsed laser ablation to apply thermomechanical stress. Surface cracks and pores were observed on the TiN coating on the Inconel 617 after five pulses, and melting of the coating was occurred over ten pulses. The TiN coating on the Si wafer also showed surface cracks and pores, but there was no surface melting. As the pulses were increased, the surface roughness of the TiN coating on Inconel 617 increased more than the TiN coating on the Si wafer, and interfacial cracking was the dominant degradation behavior on the Si wafer. The hardness of the TiN coating decreased below 50% of its initial value (2200 HK) after five pulses on the Inconel 617, whereas over 70% of the initial value (2400 HK) was maintained on the Si wafer. The TiN coating on Inconel 617 showed diffusion of substrate atoms to the surface, while Si was not found in the TiN coating on the Si wafer even after 25 pulses. It was determined that the decrease in hardness was influenced by the cracking behavior and the diffusion of atoms from the substrate.