Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

Ya Hsi Hwang; Shihyun Ahn; Chen Dong; Weidi Zhu; Byung Jae Kim; Lingcong Le; Fan Ren; Aaron G. Lind; James Dahl; Kevin S. Jones; Stephen J. Pearton; Ivan I. Kravchenko; Ming Lan Zhang

doi:10.1116/1.4919237

Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

Ya Hsi Hwang, Shihyun Ahn, Chen Dong, Weidi Zhu, Byung Jae Kim, Lingcong Le, Fan Ren, Aaron G. Lind, James Dahl, Kevin S. Jones, Stephen J. Pearton, Ivan I. Kravchenko, Ming Lan Zhang

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE) was investigated. The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/- after 3min BOE treatment. The alloyed Ohmic metallization consisted 3-5μm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Energy dispersive x-ray analysis and Auger electron microscopy were used to analyze the compositions and metal distributions in the metal alloys prior to and after BOE exposure.

Original language	English
Article number	031212
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	33
Issue number	3
DOIs	https://doi.org/10.1116/1.4919237
State	Published - May 1 2015

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Hwang, Y. H., Ahn, S., Dong, C., Zhu, W., Kim, B. J., Le, L., Ren, F., Lind, A. G., Dahl, J., Jones, K. S., Pearton, S. J., Kravchenko, I. I., & Zhang, M. L. (2015). Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 33(3), Article 031212. https://doi.org/10.1116/1.4919237

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title = "Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs",

abstract = "The degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE) was investigated. The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/- after 3min BOE treatment. The alloyed Ohmic metallization consisted 3-5μm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Energy dispersive x-ray analysis and Auger electron microscopy were used to analyze the compositions and metal distributions in the metal alloys prior to and after BOE exposure.",

author = "Hwang, {Ya Hsi} and Shihyun Ahn and Chen Dong and Weidi Zhu and Kim, {Byung Jae} and Lingcong Le and Fan Ren and Lind, {Aaron G.} and James Dahl and Jones, {Kevin S.} and Pearton, {Stephen J.} and Kravchenko, {Ivan I.} and Zhang, {Ming Lan}",

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doi = "10.1116/1.4919237",

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T1 - Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

AU - Hwang, Ya Hsi

AU - Ahn, Shihyun

AU - Dong, Chen

AU - Zhu, Weidi

AU - Kim, Byung Jae

AU - Le, Lingcong

AU - Ren, Fan

AU - Lind, Aaron G.

AU - Dahl, James

AU - Jones, Kevin S.

AU - Pearton, Stephen J.

AU - Kravchenko, Ivan I.

AU - Zhang, Ming Lan

PY - 2015/5/1

Y1 - 2015/5/1

N2 - The degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE) was investigated. The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/- after 3min BOE treatment. The alloyed Ohmic metallization consisted 3-5μm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Energy dispersive x-ray analysis and Auger electron microscopy were used to analyze the compositions and metal distributions in the metal alloys prior to and after BOE exposure.

AB - The degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE) was investigated. The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/- after 3min BOE treatment. The alloyed Ohmic metallization consisted 3-5μm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Energy dispersive x-ray analysis and Auger electron microscopy were used to analyze the compositions and metal distributions in the metal alloys prior to and after BOE exposure.

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JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

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IS - 3

M1 - 031212

ER -

Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

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