Deformation Mechanisms of Vertically Stacked WS2 /MoS2 Heterostructures: The Role of Interfaces

Sandhya Susarla; Praveena Manimunda; Ygor Morais Jaques; Jordan A. Hachtel; Juan Carlos Idrobo; Syed Asif Syed Amnulla; Douglas Soares Galvão; Chandra Sekhar Tiwary; Pulickel M. Ajayan

doi:10.1021/acsnano.8b01786

Deformation Mechanisms of Vertically Stacked WS₂ /MoS₂ Heterostructures: The Role of Interfaces

Sandhya Susarla, Praveena Manimunda, Ygor Morais Jaques, Jordan A. Hachtel, Juan Carlos Idrobo, Syed Asif Syed Amnulla, Douglas Soares Galvão, Chandra Sekhar Tiwary, Pulickel M. Ajayan

electron Microscopy and Microanalysis

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

The mechanical and optical properties generated due to the stacking of different atomically thin materials have made it possible to tune and engineer these materials for next-generation electronics. The understanding of the interlayer interactions in such stacked structures is of fundamental interest for structure and property correlation. Here, a combined approach of in situ Raman spectroscopy and mechanical straining along with molecular dynamics (MD) simulations has been used to probe one such interface, namely, the WS₂/MoS₂ heterostructure. Vertical heterostructures on poly(methyl methacrylate), when flexed, showed signs of decoupling at 1.2% strain. Theoretical calculations showed strain-induced stacking changes at 1.75% strain. The sliding characteristics of layers were also investigated using scanning probe microscopy based nanoscratch testing, and the results are further supported by MD simulations. The present study could be used to design future optoelectronic devices based on WS₂/MoS₂ heterostructures.

Original language	English
Pages (from-to)	4036-4044
Number of pages	9
Journal	ACS Nano
Volume	12
Issue number	4
DOIs	https://doi.org/10.1021/acsnano.8b01786
State	Published - Apr 24 2018

Funding

S.S was supported by FAME, one of the six centers of STARnet, a semiconductor Research Corporation program sponsored by MARCO and DARPA. Y.M.J. thanks Saõ Paulo Research Foundation (FAPESP) (Grant No. 2016/12341-5) for financial support. Y.M.J. and D.S.G. acknowledge the Center for Computational Engineering and Sciences at University of Campinas (FAPESP/CEPID Grant No. 2013/ 08293-7). Microscopy research performed as part of a user proposal at Oak Ridge National Laboratory’s Center for Nanophase Materials Sciences (CNMS), which is a U.S. Department of Energy, Office of Science User Facility.

Funders	Funder number
CEPID	2013/ 08293-7
FAME
Defense Advanced Research Projects Agency
Microelectronics Advanced Research Corporation
Fundação de Amparo à Pesquisa do Estado de São Paulo	2016/12341-5

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10.1021/acsnano.8b01786

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title = "Deformation Mechanisms of Vertically Stacked WS2 /MoS2 Heterostructures: The Role of Interfaces",

abstract = "The mechanical and optical properties generated due to the stacking of different atomically thin materials have made it possible to tune and engineer these materials for next-generation electronics. The understanding of the interlayer interactions in such stacked structures is of fundamental interest for structure and property correlation. Here, a combined approach of in situ Raman spectroscopy and mechanical straining along with molecular dynamics (MD) simulations has been used to probe one such interface, namely, the WS2/MoS2 heterostructure. Vertical heterostructures on poly(methyl methacrylate), when flexed, showed signs of decoupling at 1.2% strain. Theoretical calculations showed strain-induced stacking changes at 1.75% strain. The sliding characteristics of layers were also investigated using scanning probe microscopy based nanoscratch testing, and the results are further supported by MD simulations. The present study could be used to design future optoelectronic devices based on WS2/MoS2 heterostructures.",

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AU - Hachtel, Jordan A.

AU - Idrobo, Juan Carlos

AU - Syed Amnulla, Syed Asif

AU - Galvão, Douglas Soares

AU - Tiwary, Chandra Sekhar

AU - Ajayan, Pulickel M.

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Deformation Mechanisms of Vertically Stacked WS₂ /MoS₂ Heterostructures: The Role of Interfaces

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