Eu ions in situ doped in GaN with V/III ratios varying from 3200 to 9600 have been investigated using resonant site-selective photoluminescence (PL), power dependent cathodoluminescence (CL), and a unique electron beam power dependent dual excitation experiment combining the techniques of PL and CL. The results of these experiments reveal the role of defects in the electronic excitation of Eu ions and the link between the GaN host and Eu ion dopants. The relative number of beneficial defects present in each sample for a majority Eu site (Eu1) and a specific secondary site (Eu2) are revealed. Also, a room temperature activated non-radiative recombination pathway linked to a specific, sample dependent Eu2 excitation pathway is identified. Unlike conventional GaN LEDs, Eu:GaN device performance does not rely completely on crystalline quality, but on the presence of specific excitation enhancing defects and the absence of non-radiative de-excitation channels.