Defect-induced negative differential resistance in single-walled carbon nanotubes

G. Buchs; P. Ruffieux; P. Gröning; O. Gröning

doi:10.1063/1.2975177

Defect-induced negative differential resistance in single-walled carbon nanotubes

G. Buchs, P. Ruffieux, P. Gröning, O. Gröning

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15 Scopus citations

Abstract

The authors report on the observation of a negative differential resistance (NDR) behavior in tunneling spectra recorded on hydrogen and nitrogen plasma-induced atomic defects on semiconducting single-walled carbon nanotubes (SWNTs). The NDR is observed only in the positive bias range of the spectra. This bias asymmetry and the spectral shape in the NDR region can be explained on the basis of a bias-dependent tunneling barrier height model. Within this model the NDR behavior can be directly related to defect-induced sharp electronic states in the SWNT band gap created at the defect sites.

Original language	English
Article number	073115
Journal	Applied Physics Letters
Volume	93
Issue number	7
DOIs	https://doi.org/10.1063/1.2975177
State	Published - 2008
Externally published	Yes

Funding

The authors would like to acknowledge the financial support by the Swiss National Center of Competence in Research MANEP.

Funders	Funder number
Swiss National Center of Competence in Research MANEP

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10.1063/1.2975177

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abstract = "The authors report on the observation of a negative differential resistance (NDR) behavior in tunneling spectra recorded on hydrogen and nitrogen plasma-induced atomic defects on semiconducting single-walled carbon nanotubes (SWNTs). The NDR is observed only in the positive bias range of the spectra. This bias asymmetry and the spectral shape in the NDR region can be explained on the basis of a bias-dependent tunneling barrier height model. Within this model the NDR behavior can be directly related to defect-induced sharp electronic states in the SWNT band gap created at the defect sites.",

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AB - The authors report on the observation of a negative differential resistance (NDR) behavior in tunneling spectra recorded on hydrogen and nitrogen plasma-induced atomic defects on semiconducting single-walled carbon nanotubes (SWNTs). The NDR is observed only in the positive bias range of the spectra. This bias asymmetry and the spectral shape in the NDR region can be explained on the basis of a bias-dependent tunneling barrier height model. Within this model the NDR behavior can be directly related to defect-induced sharp electronic states in the SWNT band gap created at the defect sites.

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Defect-induced negative differential resistance in single-walled carbon nanotubes

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