Deep muonium state in InSb: Recombination center vs. trapping center

V. G. Storchak; D. G. Eshchenko; J. H. Brewer; B. A. Aronzon; S. P. Cottrell; R. L. Lichti; A. T. Savici; Y. J Uemura

doi:10.1016/j.physb.2005.11.108

Deep muonium state in InSb: Recombination center vs. trapping center

V. G. Storchak, D. G. Eshchenko, J. H. Brewer, B. A. Aronzon, S. P. Cottrell, R. L. Lichti, A. T. Savici, Y. J Uemura

Research output: Contribution to journal › Conference article › peer-review

Abstract

The bound state of an isotropic muonium atom has been detected in both n- and p-type InSb using a high-field μSR technique. The hyperfine constant obtained for this center (A=2464±1MHz) is characteristic of deep-level Mu0 centers at tetrahedral interstitial sites in other cubic semiconductors, which typically ionize above 300K. In contrast, the Mu0 center in InSb disappears above about 30K, which is more characteristic of ionization of a shallow-level impurity. The charge-state dynamics of Mu in InSb is discussed in terms of a deep trap or recombination center, rather than as electron ionization.

Original language	English
Pages (from-to)	387-389
Number of pages	3
Journal	Physica B: Physics of Condensed Matter
Volume	374-375
DOIs	https://doi.org/10.1016/j.physb.2005.11.108
State	Published - Mar 31 2006
Externally published	Yes
Event	Proceedings of the Tenth International Conference on Muon Spin Rotation, Relaxation and Resonance - Duration: Aug 8 2005 → Aug 12 2005

Funding

This work was supported by the Canadian Institute for Advanced Research, NSERC of Canada, the US NSF (Supplements to DMR-9802000 and DMR-0102862) and the Royal Society of London.

Funders	Funder number
National Science Foundation	DMR-0102862, DMR-9802000
Canadian Institute for Advanced Research
Natural Sciences and Engineering Research Council of Canada
Royal Society

Keywords

Electron ionization
Energy level
Muonium
Narrow-band semiconductor

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10.1016/j.physb.2005.11.108

Cite this

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title = "Deep muonium state in InSb: Recombination center vs. trapping center",

abstract = "The bound state of an isotropic muonium atom has been detected in both n- and p-type InSb using a high-field μSR technique. The hyperfine constant obtained for this center (A=2464±1MHz) is characteristic of deep-level Mu0 centers at tetrahedral interstitial sites in other cubic semiconductors, which typically ionize above 300K. In contrast, the Mu0 center in InSb disappears above about 30K, which is more characteristic of ionization of a shallow-level impurity. The charge-state dynamics of Mu in InSb is discussed in terms of a deep trap or recombination center, rather than as electron ionization.",

keywords = "Electron ionization, Energy level, Muonium, Narrow-band semiconductor",

author = "Storchak, {V. G.} and Eshchenko, {D. G.} and Brewer, {J. H.} and Aronzon, {B. A.} and Cottrell, {S. P.} and Lichti, {R. L.} and Savici, {A. T.} and {J Uemura}, Y.",

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doi = "10.1016/j.physb.2005.11.108",

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journal = "Physica B: Physics of Condensed Matter",

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note = "Proceedings of the Tenth International Conference on Muon Spin Rotation, Relaxation and Resonance ; Conference date: 08-08-2005 Through 12-08-2005",

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TY - JOUR

T1 - Deep muonium state in InSb

T2 - Proceedings of the Tenth International Conference on Muon Spin Rotation, Relaxation and Resonance

AU - Storchak, V. G.

AU - Eshchenko, D. G.

AU - Brewer, J. H.

AU - Aronzon, B. A.

AU - Cottrell, S. P.

AU - Lichti, R. L.

AU - Savici, A. T.

AU - J Uemura, Y.

PY - 2006/3/31

Y1 - 2006/3/31

N2 - The bound state of an isotropic muonium atom has been detected in both n- and p-type InSb using a high-field μSR technique. The hyperfine constant obtained for this center (A=2464±1MHz) is characteristic of deep-level Mu0 centers at tetrahedral interstitial sites in other cubic semiconductors, which typically ionize above 300K. In contrast, the Mu0 center in InSb disappears above about 30K, which is more characteristic of ionization of a shallow-level impurity. The charge-state dynamics of Mu in InSb is discussed in terms of a deep trap or recombination center, rather than as electron ionization.

AB - The bound state of an isotropic muonium atom has been detected in both n- and p-type InSb using a high-field μSR technique. The hyperfine constant obtained for this center (A=2464±1MHz) is characteristic of deep-level Mu0 centers at tetrahedral interstitial sites in other cubic semiconductors, which typically ionize above 300K. In contrast, the Mu0 center in InSb disappears above about 30K, which is more characteristic of ionization of a shallow-level impurity. The charge-state dynamics of Mu in InSb is discussed in terms of a deep trap or recombination center, rather than as electron ionization.

KW - Electron ionization

KW - Energy level

KW - Muonium

KW - Narrow-band semiconductor

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U2 - 10.1016/j.physb.2005.11.108

DO - 10.1016/j.physb.2005.11.108

M3 - Conference article

AN - SCOPUS:33644698954

SN - 0921-4526

VL - 374-375

SP - 387

EP - 389

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

Y2 - 8 August 2005 through 12 August 2005

ER -

Deep muonium state in InSb: Recombination center vs. trapping center

Abstract

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Keywords

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