Deep levels in nitrogen-implanted n-type GaAs

K. M. Chen; Y. Q. Jia; Y. Chen; A. P. Li; S. X. Jin; H. F. Liu

doi:10.1063/1.359889

Deep levels in nitrogen-implanted n-type GaAs

K. M. Chen, Y. Q. Jia, Y. Chen, A. P. Li, S. X. Jin, H. F. Liu

Scanning Tunneling Microscopy Group

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed.

Original language	English
Pages (from-to)	4261-4263
Number of pages	3
Journal	Journal of Applied Physics
Volume	78
Issue number	6
DOIs	https://doi.org/10.1063/1.359889
State	Published - 1995

Access to Document

10.1063/1.359889

Cite this

@article{ecfb2c6f661e4f018344bff933ada66b,

title = "Deep levels in nitrogen-implanted n-type GaAs",

abstract = "Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed.",

author = "Chen, \{K. M.\} and Jia, \{Y. Q.\} and Y. Chen and Li, \{A. P.\} and Jin, \{S. X.\} and Liu, \{H. F.\}",

year = "1995",

doi = "10.1063/1.359889",

language = "English",

volume = "78",

pages = "4261--4263",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Deep levels in nitrogen-implanted n-type GaAs

AU - Chen, K. M.

AU - Jia, Y. Q.

AU - Chen, Y.

AU - Li, A. P.

AU - Jin, S. X.

AU - Liu, H. F.

PY - 1995

Y1 - 1995

N2 - Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed.

AB - Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed.

UR - https://www.scopus.com/pages/publications/0001396565

U2 - 10.1063/1.359889

DO - 10.1063/1.359889

M3 - Article

AN - SCOPUS:0001396565

SN - 0021-8979

VL - 78

SP - 4261

EP - 4263

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Deep levels in nitrogen-implanted n-type GaAs

Abstract

Access to Document

Other files and links

Fingerprint

Cite this