Decomposition of phosphorus-containing additives at a charged NMC surface through potentiostatic holds

Adam Tornheim, Juan C. Garcia, Ritu Sahore, Hakim Iddir, Ira Bloom, Zhengcheng Zhang

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Multiple phosphorus-containing compounds were evaluated as electrolyte additives for their reactivity at the cathode surface using LiNi0.5Mn0.3Co0.2O2 (NMC532) // Li4Ti5O12 (LTO) cells with both cycling and high voltage potentiostatic holds. We surveyed additives including phosphite and phosphate derivatives with either trifluoroethyl, ethyl, or trimethylsilyl groups. Phosphite additives with the same substituents showed lower Coulombic efficiency (CE) and higher oxidation current during the potentiostatic hold. Regardless of substitution group, all phosphates showed slightly higher CE than the additive-free electrolyte (baseline). However, no additive significantly decreases oxidation reactions over the course of the potentiostatic hold, indicating a non-passivated surface. Post-mortem X-ray photoelectron spectroscopy analysis of the cathodes indicates that the additive with trimethylsilyl groups produces significantly more oxygen and phosphorus on the cathode surface for both phosphites and phosphates. Atomistic simulations indicate that these additives are susceptible to electrochemical and chemical oxidation, however chemical oxidation is much more likely for the phosphite additives. The identity of ligands on the phosphorus-containing additive can dramatically affect both the decomposition current and the cathode surface after the potentiostatic hold.

Original languageEnglish
Pages (from-to)A440-A447
JournalJournal of the Electrochemical Society
Volume166
Issue number4
DOIs
StatePublished - 2019
Externally publishedYes

Funding

The electrodes used in this article were fabricated at Argonne National Laboratory’s Cell Analysis, Modeling and Prototyping (CAMP) Facility. We acknowledge the computing resources provided on Bebop, a high-performance computing cluster operated by the Laboratory Computing Resource Center at Argonne National Laboratory. This research also used resources of the National Energy Research Scientific Computing Center (NERSC), a U.S. Department of Energy Office of Science User Facility operated under Contract No. DE-AC02-05CH11231. Support from David Howell and Peter Faguy at the Vehicle Technologies Office (VTO), U.S. Department of Energy, is gratefully acknowledged. The submitted manuscript has been created by UChicago Argonne, LLC, Operator of Argonne National Laboratory (“Argonne”). Argonne, a U.S. Department of Energy Office of Science laboratory, is operated under Contract No. DE-AC02-06CH11357. The electrodes used in this article were fabricated at Argonne National Laboratory's Cell Analysis, Modeling and Prototyping (CAMP) Facility. We acknowledge the computing resources provided on Bebop, a high-performance computing cluster operated by the Laboratory Computing Resource Center at Argonne National Laboratory. This research also used resources of the National Energy Research Scientific Computing Center (NERSC), a U.S. Department of Energy Office of Science User Facility operated under Contract No. DE-AC02-05CH11231. Support from David Howell and Peter Faguy at the Vehicle Technologies Office (VTO), U.S. Department of Energy, is gratefully acknowledged. The submitted manuscript has been created by UChicago Argonne, LLC, Operator of Argonne National Laboratory (“Argonne”). Argonne, a U.S. Department of Energy Office of Science laboratory, is operated under Contract No. DE-AC02-06CH11357.

FundersFunder number
U.S. Department of Energy Office of Science
U.S. Department of Energy
Center for Advanced Materials Processing, Clarkson University
Vehicle Technologies OfficeDE-AC02-06CH11357
Royal Society of CanadaDE-AC02-05CH11231

    Fingerprint

    Dive into the research topics of 'Decomposition of phosphorus-containing additives at a charged NMC surface through potentiostatic holds'. Together they form a unique fingerprint.

    Cite this