DC photoconductivity study of semi-insulating Cd1-xZnxTe crystals

Y. Cui; G. W. Wright; X. Ma; K. Chattopadhyay; R. B. James; A. Burger

doi:10.1007/BF02665871

DC photoconductivity study of semi-insulating Cd_1-xZn_xTe crystals

Y. Cui
, G. W. Wright
, X. Ma
, K. Chattopadhyay
, R. B. James
, A. Burger

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Room temperature direct current (DC) photocurrents were measured for detector grade Cd_1-xZn_xTe (CZT) crystals in the spectral range of 400-1000 nm as a function of light intensity and voltage. The photocurrent data were analyzed and fit to a theoretical model to extract the electrical transport properties for high-resistivity detector grade CZT material. Using the DC photocurrent measurements, the mobility-lifetime (μτ) products and the surface recombination velocities for both electrons and holes were measured. For this study the CZT detectors had Au contacts, and the surfaces were treated in a standard 5% bromine in methanol etching solution. The correlation of the DC photocurrent measurements and detector performance is also reported.

Original language	English
Pages (from-to)	774-778
Number of pages	5
Journal	Journal of Electronic Materials
Volume	30
Issue number	6
DOIs	https://doi.org/10.1007/BF02665871
State	Published - Jun 2001
Externally published	Yes

Funding

We gratefully acknowledge financial support from the DOE through contract number DE-FG08-98NV13407 and by NASA through the Fisk Center for Photonic Materials and Devices, Grants NCC8-133, NCC8-145, and NCC5-286. We also acknowledge support from the DOE under contract number DE-AC04-94AL85000. Sandia is a multi-program laboratory operated by Sandia Corporation, a Lockheed Martin Company. Specifically, the Office of Nuclear Nonproliferation supported the Sandia portion of this work.

Keywords

CZT
DC photocurrent
Detector performance
Gamma-ray detectors
Surface recombination

Access to Document

10.1007/BF02665871

Cite this

@article{c85e2bc07fff4f5c86e76cb0c48d51bb,

title = "DC photoconductivity study of semi-insulating Cd1-xZnxTe crystals",

abstract = "Room temperature direct current (DC) photocurrents were measured for detector grade Cd1-xZnxTe (CZT) crystals in the spectral range of 400-1000 nm as a function of light intensity and voltage. The photocurrent data were analyzed and fit to a theoretical model to extract the electrical transport properties for high-resistivity detector grade CZT material. Using the DC photocurrent measurements, the mobility-lifetime (μτ) products and the surface recombination velocities for both electrons and holes were measured. For this study the CZT detectors had Au contacts, and the surfaces were treated in a standard 5\% bromine in methanol etching solution. The correlation of the DC photocurrent measurements and detector performance is also reported.",

keywords = "CZT, DC photocurrent, Detector performance, Gamma-ray detectors, Surface recombination",

author = "Y. Cui and Wright, \{G. W.\} and X. Ma and K. Chattopadhyay and James, \{R. B.\} and A. Burger",

year = "2001",

month = jun,

doi = "10.1007/BF02665871",

language = "English",

volume = "30",

pages = "774--778",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "6",

}

TY - JOUR

T1 - DC photoconductivity study of semi-insulating Cd1-xZnxTe crystals

AU - Cui, Y.

AU - Wright, G. W.

AU - Ma, X.

AU - Chattopadhyay, K.

AU - James, R. B.

AU - Burger, A.

PY - 2001/6

Y1 - 2001/6

N2 - Room temperature direct current (DC) photocurrents were measured for detector grade Cd1-xZnxTe (CZT) crystals in the spectral range of 400-1000 nm as a function of light intensity and voltage. The photocurrent data were analyzed and fit to a theoretical model to extract the electrical transport properties for high-resistivity detector grade CZT material. Using the DC photocurrent measurements, the mobility-lifetime (μτ) products and the surface recombination velocities for both electrons and holes were measured. For this study the CZT detectors had Au contacts, and the surfaces were treated in a standard 5% bromine in methanol etching solution. The correlation of the DC photocurrent measurements and detector performance is also reported.

AB - Room temperature direct current (DC) photocurrents were measured for detector grade Cd1-xZnxTe (CZT) crystals in the spectral range of 400-1000 nm as a function of light intensity and voltage. The photocurrent data were analyzed and fit to a theoretical model to extract the electrical transport properties for high-resistivity detector grade CZT material. Using the DC photocurrent measurements, the mobility-lifetime (μτ) products and the surface recombination velocities for both electrons and holes were measured. For this study the CZT detectors had Au contacts, and the surfaces were treated in a standard 5% bromine in methanol etching solution. The correlation of the DC photocurrent measurements and detector performance is also reported.

KW - CZT

KW - DC photocurrent

KW - Detector performance

KW - Gamma-ray detectors

KW - Surface recombination

UR - https://www.scopus.com/pages/publications/0035359973

U2 - 10.1007/BF02665871

DO - 10.1007/BF02665871

M3 - Article

AN - SCOPUS:0035359973

SN - 0361-5235

VL - 30

SP - 774

EP - 778

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 6

ER -