Abstract
Room temperature direct current (DC) photocurrents were measured for detector grade Cd1-xZnxTe (CZT) crystals in the spectral range of 400-1000 nm as a function of light intensity and voltage. The photocurrent data were analyzed and fit to a theoretical model to extract the electrical transport properties for high-resistivity detector grade CZT material. Using the DC photocurrent measurements, the mobility-lifetime (μτ) products and the surface recombination velocities for both electrons and holes were measured. For this study the CZT detectors had Au contacts, and the surfaces were treated in a standard 5% bromine in methanol etching solution. The correlation of the DC photocurrent measurements and detector performance is also reported.
| Original language | English |
|---|---|
| Pages (from-to) | 774-778 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 30 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 2001 |
| Externally published | Yes |
Funding
We gratefully acknowledge financial support from the DOE through contract number DE-FG08-98NV13407 and by NASA through the Fisk Center for Photonic Materials and Devices, Grants NCC8-133, NCC8-145, and NCC5-286. We also acknowledge support from the DOE under contract number DE-AC04-94AL85000. Sandia is a multi-program laboratory operated by Sandia Corporation, a Lockheed Martin Company. Specifically, the Office of Nuclear Nonproliferation supported the Sandia portion of this work.
| Funders | Funder number |
|---|---|
| Fisk Center for Photonic Materials and Devices | NCC8-133, NCC8-145, DE-AC04-94AL85000, NCC5-286 |
| U.S. Department of Energy | DE-FG08-98NV13407 |
| National Aeronautics and Space Administration |
Keywords
- CZT
- DC photocurrent
- Detector performance
- Gamma-ray detectors
- Surface recombination