DC ionization conductivity of amorphous semiconductors for radiation detection applications

Bradley R. Johnson; Jarrod V. Crum; S. K. Sundaram; Renee M. Van Ginhoven; Carolyn E. Seifert; Brian J. Riley; Joseph V. Ryan

doi:10.1109/TNS.2009.2013344

DC ionization conductivity of amorphous semiconductors for radiation detection applications

Bradley R. Johnson, Jarrod V. Crum, S. K. Sundaram, Renee M. Van Ginhoven, Carolyn E. Seifert, Brian J. Riley, Joseph V. Ryan

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

DC ionization conductivity measurements were used to characterize the electrical response of amorphous semiconductors to ionizing radiation. Two different glass systems were examined: a chalcopyrite glass ( CdGe _xAs₂; for x = 0.45-1.0 ) with a tetrahedrally coordinated structure and a chalcogenide glass ( As₄₀Se(60-x)Te_x; where x = 0-12 ), with a layered or three dimensionally networked structure, depending on Te content. Changes in DC ionization current were measured as a function of the type of radiation (α or γ ), dose rate, applied field, specimen thickness and temperature. The greatest DC ionization response was measured with CdGe _0.85As₂ at 40^circC from an alpha source (which is the first reported result for radiation response from an amorphous chalcopyrite semiconductor). Avalanche gain was observed in As ₄₀Se₆₀ with exposure to alpha radiation at fields ≥ 7 × 10³ V/cm. These results demonstrate the potential of these materials for radiation detection applications.

Original language	English
Article number	5075947
Pages (from-to)	863-868
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	56
Issue number	3
DOIs	https://doi.org/10.1109/TNS.2009.2013344
State	Published - Jun 2009
Externally published	Yes

Keywords

Amorphous semiconductors
Arsenic tri-selenide AsSe
Cadmium germanium di-arsenide
CdGeAs
DC ionization

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title = "DC ionization conductivity of amorphous semiconductors for radiation detection applications",

abstract = "DC ionization conductivity measurements were used to characterize the electrical response of amorphous semiconductors to ionizing radiation. Two different glass systems were examined: a chalcopyrite glass ( CdGe xAs2; for x = 0.45-1.0 ) with a tetrahedrally coordinated structure and a chalcogenide glass ( As40Se(60-x)Tex; where x = 0-12 ), with a layered or three dimensionally networked structure, depending on Te content. Changes in DC ionization current were measured as a function of the type of radiation (α or γ ), dose rate, applied field, specimen thickness and temperature. The greatest DC ionization response was measured with CdGe 0.85As2 at 40circC from an alpha source (which is the first reported result for radiation response from an amorphous chalcopyrite semiconductor). Avalanche gain was observed in As 40Se60 with exposure to alpha radiation at fields ≥ 7 × 103 V/cm. These results demonstrate the potential of these materials for radiation detection applications.",

keywords = "Amorphous semiconductors, Arsenic tri-selenide AsSe, Cadmium germanium di-arsenide, CdGeAs, DC ionization",

author = "Johnson, {Bradley R.} and Crum, {Jarrod V.} and Sundaram, {S. K.} and {Van Ginhoven}, {Renee M.} and Seifert, {Carolyn E.} and Riley, {Brian J.} and Ryan, {Joseph V.}",

year = "2009",

month = jun,

doi = "10.1109/TNS.2009.2013344",

language = "English",

volume = "56",

pages = "863--868",

journal = "IEEE Transactions on Nuclear Science",

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T1 - DC ionization conductivity of amorphous semiconductors for radiation detection applications

AU - Johnson, Bradley R.

AU - Crum, Jarrod V.

AU - Sundaram, S. K.

AU - Van Ginhoven, Renee M.

AU - Seifert, Carolyn E.

AU - Riley, Brian J.

AU - Ryan, Joseph V.

PY - 2009/6

Y1 - 2009/6

N2 - DC ionization conductivity measurements were used to characterize the electrical response of amorphous semiconductors to ionizing radiation. Two different glass systems were examined: a chalcopyrite glass ( CdGe xAs2; for x = 0.45-1.0 ) with a tetrahedrally coordinated structure and a chalcogenide glass ( As40Se(60-x)Tex; where x = 0-12 ), with a layered or three dimensionally networked structure, depending on Te content. Changes in DC ionization current were measured as a function of the type of radiation (α or γ ), dose rate, applied field, specimen thickness and temperature. The greatest DC ionization response was measured with CdGe 0.85As2 at 40circC from an alpha source (which is the first reported result for radiation response from an amorphous chalcopyrite semiconductor). Avalanche gain was observed in As 40Se60 with exposure to alpha radiation at fields ≥ 7 × 103 V/cm. These results demonstrate the potential of these materials for radiation detection applications.

AB - DC ionization conductivity measurements were used to characterize the electrical response of amorphous semiconductors to ionizing radiation. Two different glass systems were examined: a chalcopyrite glass ( CdGe xAs2; for x = 0.45-1.0 ) with a tetrahedrally coordinated structure and a chalcogenide glass ( As40Se(60-x)Tex; where x = 0-12 ), with a layered or three dimensionally networked structure, depending on Te content. Changes in DC ionization current were measured as a function of the type of radiation (α or γ ), dose rate, applied field, specimen thickness and temperature. The greatest DC ionization response was measured with CdGe 0.85As2 at 40circC from an alpha source (which is the first reported result for radiation response from an amorphous chalcopyrite semiconductor). Avalanche gain was observed in As 40Se60 with exposure to alpha radiation at fields ≥ 7 × 103 V/cm. These results demonstrate the potential of these materials for radiation detection applications.

KW - Amorphous semiconductors

KW - Arsenic tri-selenide AsSe

KW - Cadmium germanium di-arsenide

KW - CdGeAs

KW - DC ionization

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JO - IEEE Transactions on Nuclear Science

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ER -

DC ionization conductivity of amorphous semiconductors for radiation detection applications

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