Datasheet driven silicon carbide power MOSFET model

Mihir Mudholkar; Shamim Ahmed; M. Nance Ericson; S. Shane Frank; Charles L. Britton; H. Alan Mantooth

doi:10.1109/TPEL.2013.2295774

Datasheet driven silicon carbide power MOSFET model

Mihir Mudholkar, Shamim Ahmed, M. Nance Ericson, S. Shane Frank, Charles L. Britton, H. Alan Mantooth

Research output: Contribution to journal › Article › peer-review

142 Scopus citations

Abstract

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25 °C to 225 °C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented which requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.

Original language	English
Article number	6690196
Pages (from-to)	2220-2228
Number of pages	9
Journal	IEEE Transactions on Power Electronics
Volume	29
Issue number	5
DOIs	https://doi.org/10.1109/TPEL.2013.2295774
State	Published - May 2014

Keywords

Device characterization
MOSFET
device modeling
device simulation
silicon carbide (SiC)

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10.1109/TPEL.2013.2295774

Cite this

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title = "Datasheet driven silicon carbide power MOSFET model",

abstract = "A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25 °C to 225 °C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented which requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.",

keywords = "Device characterization, MOSFET, device modeling, device simulation, silicon carbide (SiC)",

author = "Mihir Mudholkar and Shamim Ahmed and Ericson, {M. Nance} and Frank, {S. Shane} and Britton, {Charles L.} and Mantooth, {H. Alan}",

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T1 - Datasheet driven silicon carbide power MOSFET model

AU - Mudholkar, Mihir

AU - Ahmed, Shamim

AU - Ericson, M. Nance

AU - Frank, S. Shane

AU - Britton, Charles L.

AU - Mantooth, H. Alan

PY - 2014/5

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N2 - A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25 °C to 225 °C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented which requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.

AB - A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25 °C to 225 °C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented which requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.

KW - Device characterization

KW - MOSFET

KW - device modeling

KW - device simulation

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Datasheet driven silicon carbide power MOSFET model

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