DAMAGE PRODUCTION IN beta -SiC DURING ION IMPLANTATION.

S. P. Withrow; K. More; John A. Edmond; H. S. Kong; P. J. Maziasz; R. F. Davis

DAMAGE PRODUCTION IN beta -SiC DURING ION IMPLANTATION.

S. P. Withrow
, K. More
, John A. Edmond
, H. S. Kong
, P. J. Maziasz
, R. F. Davis

Center for Nanophase Matls Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Damage in single crystal beta -SiC(100) as a result of ion bombardment has been studied using Rutherford backscattering (RBS) and cross-section transmission electron microscopy (X-TEM). Samples were implanted with 123 keV **2**7Al at liquid nitrogen temperature. RBS spectra for He channeling in the (110) axis at 45 degree were obtained as a function of implantation dose to determine damage accumulation. X-TEM was used to characterize damage structure for selected doses. The surface of the SiC becomes amorphous for doses greater than 1 multiplied by 10**1**5 /cm**2. At lower doses, significant uniaxial lattice strain along the (100) direction is suggested by comparison of RBS channeling spectra obtained for several high index axes. High resolution TEM on a sample implanted at 4 multiplied by 10**1**4 /cm**2 shows no damage structure in the surface region; lattice damage in a broad layer centered roughly at the depth of highest energy deposition is characterized by small amorphous pockets in a crystalline matrix.

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Editors	Michael O. Thompson, S.Thomas Picraux, James S. Williams
Publisher	Materials Research Soc
Pages	373-378
Number of pages	6
ISBN (Print)	0931837405
State	Published - 1987
Event	Beam-Solid Interact and Transient Processes - Boston, MA, USA Duration: Dec 1 1986 → Dec 4 1986

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	74
ISSN (Print)	0272-9172

Conference

Conference	Beam-Solid Interact and Transient Processes
City	Boston, MA, USA
Period	12/1/86 → 12/4/86

Cite this

@inproceedings{3d7cea9962ac436fbed17bf61bbf4991,

title = "DAMAGE PRODUCTION IN beta -SiC DURING ION IMPLANTATION.",

abstract = "Damage in single crystal beta -SiC(100) as a result of ion bombardment has been studied using Rutherford backscattering (RBS) and cross-section transmission electron microscopy (X-TEM). Samples were implanted with 123 keV **2**7Al at liquid nitrogen temperature. RBS spectra for He channeling in the (110) axis at 45 degree were obtained as a function of implantation dose to determine damage accumulation. X-TEM was used to characterize damage structure for selected doses. The surface of the SiC becomes amorphous for doses greater than 1 multiplied by 10**1**5 /cm**2. At lower doses, significant uniaxial lattice strain along the (100) direction is suggested by comparison of RBS channeling spectra obtained for several high index axes. High resolution TEM on a sample implanted at 4 multiplied by 10**1**4 /cm**2 shows no damage structure in the surface region; lattice damage in a broad layer centered roughly at the depth of highest energy deposition is characterized by small amorphous pockets in a crystalline matrix.",

author = "Withrow, \{S. P.\} and K. More and Edmond, \{John A.\} and Kong, \{H. S.\} and Maziasz, \{P. J.\} and Davis, \{R. F.\}",

year = "1987",

language = "English",

isbn = "0931837405",

series = "Materials Research Society Symposia Proceedings",

publisher = "Materials Research Soc",

pages = "373--378",

editor = "Thompson, \{Michael O.\} and S.Thomas Picraux and Williams, \{James S.\}",

booktitle = "Materials Research Society Symposia Proceedings",

note = "Beam-Solid Interact and Transient Processes ; Conference date: 01-12-1986 Through 04-12-1986",

}

Withrow, SP, More, K, Edmond, JA, Kong, HS, Maziasz, PJ & Davis, RF 1987, DAMAGE PRODUCTION IN beta -SiC DURING ION IMPLANTATION. in MO Thompson, ST Picraux & JS Williams (eds), Materials Research Society Symposia Proceedings. Materials Research Society Symposia Proceedings, vol. 74, Materials Research Soc, pp. 373-378, Beam-Solid Interact and Transient Processes, Boston, MA, USA, 12/1/86.

DAMAGE PRODUCTION IN beta -SiC DURING ION IMPLANTATION. / Withrow, S. P.; More, K.; Edmond, John A. et al.
Materials Research Society Symposia Proceedings. ed. / Michael O. Thompson; S.Thomas Picraux; James S. Williams. Materials Research Soc, 1987. p. 373-378 (Materials Research Society Symposia Proceedings; Vol. 74).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - DAMAGE PRODUCTION IN beta -SiC DURING ION IMPLANTATION.

AU - Withrow, S. P.

AU - More, K.

AU - Edmond, John A.

AU - Kong, H. S.

AU - Maziasz, P. J.

AU - Davis, R. F.

PY - 1987

Y1 - 1987

N2 - Damage in single crystal beta -SiC(100) as a result of ion bombardment has been studied using Rutherford backscattering (RBS) and cross-section transmission electron microscopy (X-TEM). Samples were implanted with 123 keV **2**7Al at liquid nitrogen temperature. RBS spectra for He channeling in the (110) axis at 45 degree were obtained as a function of implantation dose to determine damage accumulation. X-TEM was used to characterize damage structure for selected doses. The surface of the SiC becomes amorphous for doses greater than 1 multiplied by 10**1**5 /cm**2. At lower doses, significant uniaxial lattice strain along the (100) direction is suggested by comparison of RBS channeling spectra obtained for several high index axes. High resolution TEM on a sample implanted at 4 multiplied by 10**1**4 /cm**2 shows no damage structure in the surface region; lattice damage in a broad layer centered roughly at the depth of highest energy deposition is characterized by small amorphous pockets in a crystalline matrix.

AB - Damage in single crystal beta -SiC(100) as a result of ion bombardment has been studied using Rutherford backscattering (RBS) and cross-section transmission electron microscopy (X-TEM). Samples were implanted with 123 keV **2**7Al at liquid nitrogen temperature. RBS spectra for He channeling in the (110) axis at 45 degree were obtained as a function of implantation dose to determine damage accumulation. X-TEM was used to characterize damage structure for selected doses. The surface of the SiC becomes amorphous for doses greater than 1 multiplied by 10**1**5 /cm**2. At lower doses, significant uniaxial lattice strain along the (100) direction is suggested by comparison of RBS channeling spectra obtained for several high index axes. High resolution TEM on a sample implanted at 4 multiplied by 10**1**4 /cm**2 shows no damage structure in the surface region; lattice damage in a broad layer centered roughly at the depth of highest energy deposition is characterized by small amorphous pockets in a crystalline matrix.

UR - https://www.scopus.com/pages/publications/0023566462

M3 - Conference contribution

AN - SCOPUS:0023566462

SN - 0931837405

T3 - Materials Research Society Symposia Proceedings

SP - 373

EP - 378

BT - Materials Research Society Symposia Proceedings

A2 - Thompson, Michael O.

A2 - Picraux, S.Thomas

A2 - Williams, James S.

PB - Materials Research Soc

T2 - Beam-Solid Interact and Transient Processes

Y2 - 1 December 1986 through 4 December 1986

ER -

DAMAGE PRODUCTION IN beta -SiC DURING ION IMPLANTATION.

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