@inproceedings{3d7cea9962ac436fbed17bf61bbf4991,
title = "DAMAGE PRODUCTION IN beta -SiC DURING ION IMPLANTATION.",
abstract = "Damage in single crystal beta -SiC(100) as a result of ion bombardment has been studied using Rutherford backscattering (RBS) and cross-section transmission electron microscopy (X-TEM). Samples were implanted with 123 keV **2**7Al at liquid nitrogen temperature. RBS spectra for He channeling in the (110) axis at 45 degree were obtained as a function of implantation dose to determine damage accumulation. X-TEM was used to characterize damage structure for selected doses. The surface of the SiC becomes amorphous for doses greater than 1 multiplied by 10**1**5 /cm**2. At lower doses, significant uniaxial lattice strain along the (100) direction is suggested by comparison of RBS channeling spectra obtained for several high index axes. High resolution TEM on a sample implanted at 4 multiplied by 10**1**4 /cm**2 shows no damage structure in the surface region; lattice damage in a broad layer centered roughly at the depth of highest energy deposition is characterized by small amorphous pockets in a crystalline matrix.",
author = "Withrow, {S. P.} and K. More and Edmond, {John A.} and Kong, {H. S.} and Maziasz, {P. J.} and Davis, {R. F.}",
year = "1987",
language = "English",
isbn = "0931837405",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "373--378",
editor = "Thompson, {Michael O.} and S.Thomas Picraux and Williams, {James S.}",
booktitle = "Materials Research Society Symposia Proceedings",
note = "Beam-Solid Interact and Transient Processes ; Conference date: 01-12-1986 Through 04-12-1986",
}