Cuspidal pit formation during the growth of SixGe1-x strained films

K. M. Chen; D. E. Jesson; S. J. Pennycook; T. Thundat; R. J. Warmack

doi:10.1063/1.114172

Cuspidal pit formation during the growth of Si_xGe_1-x strained films

K. M. Chen
, D. E. Jesson
, S. J. Pennycook
, T. Thundat
, R. J. Warmack

Sensors and Electronics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We have studied the formation of cuspidal pits during the growth of strained Si_xGe_1-x alloy layers at relatively high supersaturations. The pit formation is directly linked to strain in the alloy layer, and we propose a heterogeneous formation mechanism in which the pits develop from stress-driven surface diffusion associated with a localized initial perturbation of the buffer layer surface.

Original language	English
Pages (from-to)	34
Number of pages	1
Journal	Applied Physics Letters
Volume	66
Issue number	1
DOIs	https://doi.org/10.1063/1.114172
State	Published - 1995

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@article{d48582537e064cdf973bb71d7e999818,

title = "Cuspidal pit formation during the growth of SixGe1-x strained films",

abstract = "We have studied the formation of cuspidal pits during the growth of strained SixGe1-x alloy layers at relatively high supersaturations. The pit formation is directly linked to strain in the alloy layer, and we propose a heterogeneous formation mechanism in which the pits develop from stress-driven surface diffusion associated with a localized initial perturbation of the buffer layer surface.",

author = "Chen, \{K. M.\} and Jesson, \{D. E.\} and Pennycook, \{S. J.\} and T. Thundat and Warmack, \{R. J.\}",

year = "1995",

doi = "10.1063/1.114172",

language = "English",

volume = "66",

pages = "34",

journal = "Applied Physics Letters",

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T1 - Cuspidal pit formation during the growth of SixGe1-x strained films

AU - Chen, K. M.

AU - Jesson, D. E.

AU - Pennycook, S. J.

AU - Thundat, T.

AU - Warmack, R. J.

PY - 1995

Y1 - 1995

N2 - We have studied the formation of cuspidal pits during the growth of strained SixGe1-x alloy layers at relatively high supersaturations. The pit formation is directly linked to strain in the alloy layer, and we propose a heterogeneous formation mechanism in which the pits develop from stress-driven surface diffusion associated with a localized initial perturbation of the buffer layer surface.

AB - We have studied the formation of cuspidal pits during the growth of strained SixGe1-x alloy layers at relatively high supersaturations. The pit formation is directly linked to strain in the alloy layer, and we propose a heterogeneous formation mechanism in which the pits develop from stress-driven surface diffusion associated with a localized initial perturbation of the buffer layer surface.

UR - https://www.scopus.com/pages/publications/36449006786

U2 - 10.1063/1.114172

DO - 10.1063/1.114172

M3 - Article

AN - SCOPUS:36449006786

SN - 0003-6951

VL - 66

SP - 34

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Cuspidal pit formation during the growth of Si_xGe_1-x strained films

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