Current induced abnormal electroresistance effect observed in epitaxial La0.9Hf0.1MnO3 thin films

Jie Xing; Ju Gao; Le Wang

doi:10.1063/1.4879318

Current induced abnormal electroresistance effect observed in epitaxial La_0.9Hf_0.1MnO₃ thin films

Jie Xing, Ju Gao, Le Wang

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

La_0.9Hf_0.1MnO₃ thin films with thickness 100 nm were prepared by using a pulsed laser deposition technique. Transport behaviors were investigated under various applied currents without an applied magnetic field. When the applied current is not too large, the peak value of the resistance gradually decreases with increasing current, demonstrating a normal electroresistance (ER) effect. However, when the current reaches a critical value, a high-resistance state appears at a lower temperature below the Curie temperature. And the appeared resistance peak at low temperature turns out to be extremely sensitive to a weak current. Even a very small current could greatly depress the height of the peak, an abnormal ER effect appears. Maximum resistance ratio ER, defined as [R(1 μA)-R(100 μA)]/R(100 μA), is about 1257% at 50 K. Physics related to the appearance of the novel state and the abnormal ER effect is discussed.

Original language	English
Article number	203706
Journal	Journal of Applied Physics
Volume	115
Issue number	20
DOIs	https://doi.org/10.1063/1.4879318
State	Published - May 28 2014
Externally published	Yes

Funding

Funders	Funder number
National Natural Science Foundation of China	11104255

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10.1063/1.4879318

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title = "Current induced abnormal electroresistance effect observed in epitaxial La0.9Hf0.1MnO3 thin films",

abstract = "La0.9Hf0.1MnO3 thin films with thickness 100 nm were prepared by using a pulsed laser deposition technique. Transport behaviors were investigated under various applied currents without an applied magnetic field. When the applied current is not too large, the peak value of the resistance gradually decreases with increasing current, demonstrating a normal electroresistance (ER) effect. However, when the current reaches a critical value, a high-resistance state appears at a lower temperature below the Curie temperature. And the appeared resistance peak at low temperature turns out to be extremely sensitive to a weak current. Even a very small current could greatly depress the height of the peak, an abnormal ER effect appears. Maximum resistance ratio ER, defined as [R(1 μA)-R(100 μA)]/R(100 μA), is about 1257% at 50 K. Physics related to the appearance of the novel state and the abnormal ER effect is discussed.",

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T1 - Current induced abnormal electroresistance effect observed in epitaxial La0.9Hf0.1MnO3 thin films

AU - Xing, Jie

AU - Gao, Ju

AU - Wang, Le

PY - 2014/5/28

Y1 - 2014/5/28

N2 - La0.9Hf0.1MnO3 thin films with thickness 100 nm were prepared by using a pulsed laser deposition technique. Transport behaviors were investigated under various applied currents without an applied magnetic field. When the applied current is not too large, the peak value of the resistance gradually decreases with increasing current, demonstrating a normal electroresistance (ER) effect. However, when the current reaches a critical value, a high-resistance state appears at a lower temperature below the Curie temperature. And the appeared resistance peak at low temperature turns out to be extremely sensitive to a weak current. Even a very small current could greatly depress the height of the peak, an abnormal ER effect appears. Maximum resistance ratio ER, defined as [R(1 μA)-R(100 μA)]/R(100 μA), is about 1257% at 50 K. Physics related to the appearance of the novel state and the abnormal ER effect is discussed.

AB - La0.9Hf0.1MnO3 thin films with thickness 100 nm were prepared by using a pulsed laser deposition technique. Transport behaviors were investigated under various applied currents without an applied magnetic field. When the applied current is not too large, the peak value of the resistance gradually decreases with increasing current, demonstrating a normal electroresistance (ER) effect. However, when the current reaches a critical value, a high-resistance state appears at a lower temperature below the Curie temperature. And the appeared resistance peak at low temperature turns out to be extremely sensitive to a weak current. Even a very small current could greatly depress the height of the peak, an abnormal ER effect appears. Maximum resistance ratio ER, defined as [R(1 μA)-R(100 μA)]/R(100 μA), is about 1257% at 50 K. Physics related to the appearance of the novel state and the abnormal ER effect is discussed.

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Current induced abnormal electroresistance effect observed in epitaxial La_0.9Hf_0.1MnO₃ thin films

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