Abstract
Magnetic structure and crystal symmetry, which primarily determine the time-reversal and inversion symmetry, may give rise to numerous exotic quantum phenomena in magnetic semiconductors and semimetals when arranged in different patterns. In this work, a new layered magnetic semiconductor, Eu3-δZnxSnyAs3, was discovered and high-quality single crystals were grown using the Sn flux. According to structural characterization by x-ray diffraction and atomic-resolution scanning transmission electron microscopy, Eu3-δZnxSnyAs3 is found to crystallize in a hexagonal symmetry with the space group P63/mmc (No. 194). After examining different specimens, we conclude that their stoichiometry is fixed at ∼Eu2.6Zn0.65Sn0.85As3, which meets the chemical charge balance. Eu3-δZnxSnyAs3 is composed of septuple (Eu1-δSnyAs2)-Eu-(ZnxAs)-Eu sequences. The shortest Eu-Eu distance in the system is between two Eu layers separated by ZnxAs along the c-axis. Magnetization measurement shows an antiferromagnetic ordering in Eu3-δZnxSnyAs3 at TN ∼12 K, where the magnetic easy-axis is along the c-axis, and Mössbauer spectroscopy observes magnetic hyperfine splitting on Eu and Sn at 6 K. Magnetic anisotropy is significantly different from the ones along the ab-plane in other layered Eu-based magnetic semimetals. Heat capacity measurements confirm the magnetic transition around 12 K. Electrical resistivity measurement indicates semiconductor behavior with a band gap of ∼0.86 eV. Various Eu-based magnetic semiconductors could provide a tunable platform to study potential topological and magnetic properties.
Original language | English |
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Article number | 043902 |
Journal | Journal of Applied Physics |
Volume | 132 |
Issue number | 4 |
DOIs | |
State | Published - Jul 28 2022 |
Funding
W.X. deeply appreciates the useful discussion with Professor Susan Kauzlarich (UC-Davis). The work at Rutgers was supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences under Award No. DE-SC0022156. Mössbauer spectral work by D.H.M. and R.P.H. was supported by the U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences (BES), Materials Sciences and Engineering Division. Work by J.B. and R.J. was supported by No. NSF DMR-1504226. The authors acknowledge the sample characterization of Imaging and Analysis Center (IAC) at Princeton University, partially supported by the Princeton Center for Complex Materials (PCCM) and the NSF-MRSEC program (MRSEC; No. DMR-2011750).
Funders | Funder number |
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NSF-MRSEC program | |
National Science Foundation | DMR-1504226 |
U.S. Department of Energy | |
Office of Science | |
Basic Energy Sciences | DE-SC0022156 |
Princeton University | |
Division of Materials Sciences and Engineering | |
Materials Research Science and Engineering Center, Harvard University | DMR-2011750 |
Princeton Center for Complex Materials |