Crystal growth of the Pr2PdSi3 intermetallic compound

Y. Xu, W. Lser, G. Behr, M. Frontzek, F. Tang, B. Bchner, L. Liu

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Pr2PdSi3 single crystals were grown by a vertical floating zone method with radiation heating at a zone traveling rate of 3 mm/h. The compound exhibits congruent melting behavior at a liquidus temperature of about 1770 °C. The slightly Pd-depleted composition of the crystal, with respect to the nominal Pr2PdSi3 stoichiometry, led to gradual accumulation of Pd in the traveling zone and to a decreasing operating temperature during the growth process. Thin platelet-like precipitates of a PrSi phase were detected in the crystal matrix. Single crystalline samples exhibit a huge anisotropy due to the crystal electric field effect and order antiferromagnetically below the Nel temperature TN=2.17 K. The [1 1 0] orientation was identified as the magnetic easy axis at room temperature. At lower temperature (∼20 K) magnetic easy and hard axes interchange with each other. Two additional magnetic phase transitions are observed at temperatures below 1 K.

Original languageEnglish
Pages (from-to)1992-1996
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number12-13
DOIs
StatePublished - Jun 1 2010
Externally publishedYes

Keywords

  • A2. Floating zone technique
  • A2. Single crystal growth
  • B1. Rare earth compounds
  • B2. Magnetic materials

Fingerprint

Dive into the research topics of 'Crystal growth of the Pr2PdSi3 intermetallic compound'. Together they form a unique fingerprint.

Cite this