Crystal growth of B12As2 on SiC substrate by CVD method

R. Nagarajan; Z. Xu; J. H. Edgar; F. Baig; J. Chaudhuri; Z. Rek; E. A. Payzant; H. M. Meyer; J. Pomeroy; M. Kuball

doi:10.1016/j.jcrysgro.2004.07.068

Crystal growth of B₁₂As₂ on SiC substrate by CVD method

R. Nagarajan, Z. Xu, J. H. Edgar, F. Baig, J. Chaudhuri, Z. Rek, E. A. Payzant, H. M. Meyer, J. Pomeroy, M. Kuball

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The growth of B₁₂As₂ by chemical vapor deposition on 6H-SiC substrates using hydrides B₂H₆ and AsH₃ as the reactants is described. The growth rate increased from 1.5 μm/h at 1100°C to a maximum of 5 μm/h at 1400°C, and decreased at higher temperatures. X-ray diffraction indicates that the deposits were amorphous when the deposition temperature was below 1150°C. Strongly c-axis oriented crystalline B₁₂As₂ films were obtained at temperatures higher than 1150°C. The orientation relationship of the B ₁₂As₂ on 6H-SiC was (0 0 0 1)〈1 0 1̄ 0〉(0 0 0 1)〈1 1 2̄ 0〉. The surface morphology of the B ₁₂As₂ film grown at 1150°C consisted of isolated triangular crystallites. A continuous film forms as the growth temperature is progressively increased up to 1450°C.

Original language	English
Pages (from-to)	431-438
Number of pages	8
Journal	Journal of Crystal Growth
Volume	273
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.07.068
State	Published - Jan 3 2005
Externally published	Yes

Funding

Support for this research from the DOE EPSCoR laboratory partnership program (Grant No. DE-FG02-01ER45888) is gratefully appreciated. Research sponsored in part by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Freedom CAR and Vehicle Technologies, as part of the High Temperature Materials Laboratory User Program, Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the US Department of Energy under contract number DE-AC05-00OR22725 is acknowledged. This work was partially done at SSRL, Stanford, CA, which is operated by the DOE and Office of Basic Energy Sciences. The work in Bristol was in part supported by ESPRC.

Funders	Funder number
DOE EPSCoR	DE-FG02-01ER45888
ESPRC
Office of Freedom Car
U.S. Department of Energy	DE-AC05-00OR22725
Office of Energy Efficiency and Renewable Energy
Basic Energy Sciences
Oak Ridge National Laboratory

Keywords

A1. Characterization
A2. Crystal growth
A3. Chemical vapor deposition processes

Access to Document

10.1016/j.jcrysgro.2004.07.068

Cite this

@article{3e16d5608fba43dcac61560b501e3b45,

title = "Crystal growth of B12As2 on SiC substrate by CVD method",

abstract = "The growth of B12As2 by chemical vapor deposition on 6H-SiC substrates using hydrides B2H6 and AsH3 as the reactants is described. The growth rate increased from 1.5 μm/h at 1100°C to a maximum of 5 μm/h at 1400°C, and decreased at higher temperatures. X-ray diffraction indicates that the deposits were amorphous when the deposition temperature was below 1150°C. Strongly c-axis oriented crystalline B12As2 films were obtained at temperatures higher than 1150°C. The orientation relationship of the B 12As2 on 6H-SiC was (0 0 0 1)〈1 0 {\=1} 0〉(0 0 0 1)〈1 1 {\=2} 0〉. The surface morphology of the B 12As2 film grown at 1150°C consisted of isolated triangular crystallites. A continuous film forms as the growth temperature is progressively increased up to 1450°C.",

keywords = "A1. Characterization, A2. Crystal growth, A3. Chemical vapor deposition processes",

author = "R. Nagarajan and Z. Xu and Edgar, {J. H.} and F. Baig and J. Chaudhuri and Z. Rek and Payzant, {E. A.} and Meyer, {H. M.} and J. Pomeroy and M. Kuball",

year = "2005",

month = jan,

day = "3",

doi = "10.1016/j.jcrysgro.2004.07.068",

language = "English",

volume = "273",

pages = "431--438",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Crystal growth of B12As2 on SiC substrate by CVD method

AU - Nagarajan, R.

AU - Xu, Z.

AU - Edgar, J. H.

AU - Baig, F.

AU - Chaudhuri, J.

AU - Rek, Z.

AU - Payzant, E. A.

AU - Meyer, H. M.

AU - Pomeroy, J.

AU - Kuball, M.

PY - 2005/1/3

Y1 - 2005/1/3

N2 - The growth of B12As2 by chemical vapor deposition on 6H-SiC substrates using hydrides B2H6 and AsH3 as the reactants is described. The growth rate increased from 1.5 μm/h at 1100°C to a maximum of 5 μm/h at 1400°C, and decreased at higher temperatures. X-ray diffraction indicates that the deposits were amorphous when the deposition temperature was below 1150°C. Strongly c-axis oriented crystalline B12As2 films were obtained at temperatures higher than 1150°C. The orientation relationship of the B 12As2 on 6H-SiC was (0 0 0 1)〈1 0 1̄ 0〉(0 0 0 1)〈1 1 2̄ 0〉. The surface morphology of the B 12As2 film grown at 1150°C consisted of isolated triangular crystallites. A continuous film forms as the growth temperature is progressively increased up to 1450°C.

AB - The growth of B12As2 by chemical vapor deposition on 6H-SiC substrates using hydrides B2H6 and AsH3 as the reactants is described. The growth rate increased from 1.5 μm/h at 1100°C to a maximum of 5 μm/h at 1400°C, and decreased at higher temperatures. X-ray diffraction indicates that the deposits were amorphous when the deposition temperature was below 1150°C. Strongly c-axis oriented crystalline B12As2 films were obtained at temperatures higher than 1150°C. The orientation relationship of the B 12As2 on 6H-SiC was (0 0 0 1)〈1 0 1̄ 0〉(0 0 0 1)〈1 1 2̄ 0〉. The surface morphology of the B 12As2 film grown at 1150°C consisted of isolated triangular crystallites. A continuous film forms as the growth temperature is progressively increased up to 1450°C.

KW - A1. Characterization

KW - A2. Crystal growth

KW - A3. Chemical vapor deposition processes

UR - http://www.scopus.com/inward/record.url?scp=10644219507&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.07.068

DO - 10.1016/j.jcrysgro.2004.07.068

M3 - Article

AN - SCOPUS:10644219507

SN - 0022-0248

VL - 273

SP - 431

EP - 438

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -