Cryogenic Performance of a Monolithic W-Band Amplifier Using Picosecond Optoelectronic Technique

F. Oshita; M. Martin; H. Fetterman; M. Matloubian; H. Wang; K. Tan; D. Streit

doi:10.1109/75.153607

Cryogenic Performance of a Monolithic W-Band Amplifier Using Picosecond Optoelectronic Technique

F. Oshita, M. Martin, H. Fetterman, M. Matloubian, H. Wang, K. Tan, D. Streit

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6 Scopus citations

Abstract

Cryogenic characterization of a monolithic W-band pseudomorphic InGaAs HEMT amplifier has been demonstrated for the first time using the picosecond optoelectronic technique. Low temperature, millimeter-wave measurements have been performed without the use of conventional millimeter-wave sources, components, and transitions. At 94 GHz, the single-stage amplifier exhibits gain of 4.5 dB at 300 K, which increases to 7 dB at 70 K.

Original language	English
Pages (from-to)	340-342
Number of pages	3
Journal	IEEE Microwave and Guided Wave Letters
Volume	2
Issue number	8
DOIs	https://doi.org/10.1109/75.153607
State	Published - Aug 1992
Externally published	Yes

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@article{98ade9344d5c4a65a11c93ac79394423,

title = "Cryogenic Performance of a Monolithic W-Band Amplifier Using Picosecond Optoelectronic Technique",

abstract = "Cryogenic characterization of a monolithic W-band pseudomorphic InGaAs HEMT amplifier has been demonstrated for the first time using the picosecond optoelectronic technique. Low temperature, millimeter-wave measurements have been performed without the use of conventional millimeter-wave sources, components, and transitions. At 94 GHz, the single-stage amplifier exhibits gain of 4.5 dB at 300 K, which increases to 7 dB at 70 K.",

author = "F. Oshita and M. Martin and H. Fetterman and M. Matloubian and H. Wang and K. Tan and D. Streit",

year = "1992",

month = aug,

doi = "10.1109/75.153607",

language = "English",

volume = "2",

pages = "340--342",

journal = "IEEE Microwave and Guided Wave Letters",

issn = "1051-8207",

number = "8",

}

TY - JOUR

T1 - Cryogenic Performance of a Monolithic W-Band Amplifier Using Picosecond Optoelectronic Technique

AU - Oshita, F.

AU - Martin, M.

AU - Fetterman, H.

AU - Matloubian, M.

AU - Wang, H.

AU - Tan, K.

AU - Streit, D.

PY - 1992/8

Y1 - 1992/8

N2 - Cryogenic characterization of a monolithic W-band pseudomorphic InGaAs HEMT amplifier has been demonstrated for the first time using the picosecond optoelectronic technique. Low temperature, millimeter-wave measurements have been performed without the use of conventional millimeter-wave sources, components, and transitions. At 94 GHz, the single-stage amplifier exhibits gain of 4.5 dB at 300 K, which increases to 7 dB at 70 K.

AB - Cryogenic characterization of a monolithic W-band pseudomorphic InGaAs HEMT amplifier has been demonstrated for the first time using the picosecond optoelectronic technique. Low temperature, millimeter-wave measurements have been performed without the use of conventional millimeter-wave sources, components, and transitions. At 94 GHz, the single-stage amplifier exhibits gain of 4.5 dB at 300 K, which increases to 7 dB at 70 K.

UR - http://www.scopus.com/inward/record.url?scp=0000416940&partnerID=8YFLogxK

U2 - 10.1109/75.153607

DO - 10.1109/75.153607

M3 - Article

AN - SCOPUS:0000416940

SN - 1051-8207

VL - 2

SP - 340

EP - 342

JO - IEEE Microwave and Guided Wave Letters

JF - IEEE Microwave and Guided Wave Letters

IS - 8

ER -

Cryogenic Performance of a Monolithic W-Band Amplifier Using Picosecond Optoelectronic Technique

Abstract

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