Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

M. D. Biegalski; D. D. Fong; J. A. Eastman; P. H. Fuoss; S. K. Streiffer; T. Heeg; J. Schubert; W. Tian; C. T. Nelson; X. Q. Pan; M. E. Hawley; M. Bernhagen; P. Reiche; R. Uecker; S. Trolier-Mckinstry; D. G. Schlom

doi:10.1063/1.3037216

Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

M. D. Biegalski, D. D. Fong, J. A. Eastman, P. H. Fuoss, S. K. Streiffer, T. Heeg, J. Schubert, W. Tian, C. T. Nelson, X. Q. Pan, M. E. Hawley, M. Bernhagen, P. Reiche, R. Uecker, S. Trolier-Mckinstry, D. G. Schlom

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Abstract

Strained epitaxial SrTiO3 films were grown on orthorhombic (101) DyScO3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 Å were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 Å. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018°). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 °C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

Original language	English
Article number	114109
Journal	Journal of Applied Physics
Volume	104
Issue number	11
DOIs	https://doi.org/10.1063/1.3037216
State	Published - 2008
Externally published	Yes

Funding

The authors gratefully acknowledge helpful discussions with D.H.A. Blank, S.P. Baker, and V. Vaithyanathan, the use of the Center for Nanoscale Materials and Advanced Photon Source at Argonne National Laboratory, and the financial support of the National Science Foundation through Grant No. DMR-0507146, the Department of Energy through Grant No. DE-FG02-07ER46416, and the Office of Naval Research (ONR) though Grant No. N00014-03-1-0721 monitored by Dr. Colin Wood. Work at Argonne was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

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Biegalski, M. D., Fong, D. D., Eastman, J. A., Fuoss, P. H., Streiffer, S. K., Heeg, T., Schubert, J., Tian, W., Nelson, C. T., Pan, X. Q., Hawley, M. E., Bernhagen, M., Reiche, P., Uecker, R., Trolier-Mckinstry, S., & Schlom, D. G. (2008). Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3. Journal of Applied Physics, 104(11), Article 114109. https://doi.org/10.1063/1.3037216

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title = "Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3",

abstract = "Strained epitaxial SrTiO3 films were grown on orthorhombic (101) DyScO3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {\AA} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {\AA}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018°). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 °C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.",

author = "Biegalski, {M. D.} and Fong, {D. D.} and Eastman, {J. A.} and Fuoss, {P. H.} and Streiffer, {S. K.} and T. Heeg and J. Schubert and W. Tian and Nelson, {C. T.} and Pan, {X. Q.} and Hawley, {M. E.} and M. Bernhagen and P. Reiche and R. Uecker and S. Trolier-Mckinstry and Schlom, {D. G.}",

year = "2008",

doi = "10.1063/1.3037216",

language = "English",

volume = "104",

journal = "Journal of Applied Physics",

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Biegalski, MD, Fong, DD, Eastman, JA, Fuoss, PH, Streiffer, SK, Heeg, T, Schubert, J, Tian, W, Nelson, CT, Pan, XQ, Hawley, ME, Bernhagen, M, Reiche, P, Uecker, R, Trolier-Mckinstry, S & Schlom, DG 2008, 'Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3', Journal of Applied Physics, vol. 104, no. 11, 114109. https://doi.org/10.1063/1.3037216

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T1 - Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

AU - Biegalski, M. D.

AU - Fong, D. D.

AU - Eastman, J. A.

AU - Fuoss, P. H.

AU - Streiffer, S. K.

AU - Heeg, T.

AU - Schubert, J.

AU - Tian, W.

AU - Nelson, C. T.

AU - Pan, X. Q.

AU - Hawley, M. E.

AU - Bernhagen, M.

AU - Reiche, P.

AU - Uecker, R.

AU - Trolier-Mckinstry, S.

AU - Schlom, D. G.

PY - 2008

Y1 - 2008

N2 - Strained epitaxial SrTiO3 films were grown on orthorhombic (101) DyScO3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 Å were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 Å. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018°). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 °C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

AB - Strained epitaxial SrTiO3 films were grown on orthorhombic (101) DyScO3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 Å were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 Å. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018°). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 °C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

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Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

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