Creation of a two-dimensional electron gas at an oxide interface on silicon

J. W. Park; D. F. Bogorin; C. Cen; D. A. Felker; Y. Zhang; C. T. Nelson; C. W. Bark; C. M. Folkman; X. Q. Pan; M. S. Rzchowski; J. Levy; C. B. Eom

doi:10.1038/ncomms1096

Creation of a two-dimensional electron gas at an oxide interface on silicon

J. W. Park, D. F. Bogorin, C. Cen, D. A. Felker, Y. Zhang, C. T. Nelson, C. W. Bark, C. M. Folkman, X. Q. Pan, M. S. Rzchowski, J. Levy, C. B. Eom

Research output: Contribution to journal › Article › peer-review

164 Scopus citations

Abstract

In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlO₃/SrTiO₃ (LAO/STO) heterointerfaces grown directly on (001) Silicon (Si) substrates. The room-temperature electrical transport properties of LAO/STO heterointerfaces on Si are comparable with those formed from a SrTiO₃ bulk single crystal. The ability to form reversible conducting nanostructures directly on Si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established Si-based platforms.

Original language	English
Article number	94
Journal	Nature Communications
Volume	1
Issue number	7
DOIs	https://doi.org/10.1038/ncomms1096
State	Published - 2010
Externally published	Yes

Funding

We thank J. Mannhart, S. Thiel and D.G. Schlom for helpful discussions. The authors gratefully acknowledge the financial support of the National Science Foundation through grants DMR-0906443 (C.B.E), DMR-0704022 (J.L.), DARPA Seedling (J.L.), Fine Foundation (J.L.), DMR-0907191 (X.Q.P), DoE/BES DE-FG02-07ER46416 (X.Q.P), Nanochip and David and Lucile Packard Fellowship (C.B.E). One of the authors (X.Q.P) acknowledges the support of the National Center for Electron Microscopy, Lawrence Berkeley Lab, which is supported by the US Department of Energy under Contract # DE-AC02-05CH11231. We thank J. Mannhart, S. Thiel and D.G. Schlom for helpful discussions. The authors gratefully acknowledge the financial support of the National Science Foundation through grants DMR-0906443 (C.B.E.), DMR-0704022 (J.L.), ARO W911NF-08-1-0317 (J.L.), DARPA Seedling (J.L.), Fine Foundation (J.L.), DMR-0907191 (X.Q.P.), DoE/BES DE-FG02-07ER46416 (X.Q.P.), Nanochip and David and Lucile Packard Fellowship (C.B.E.). One of the authors (X.Q.P.) acknowledges the support of the National Center for Electron Microscopy, Lawrence Berkeley Lab, which is supported by the US Department of Energy under Contract # DE-AC02-05CH11231.

Funders	Funder number
Fine Foundation	DMR-0907191, DoE/BES DE-FG02-07ER46416
National Science Foundation	DMR-0906443, ARO W911NF-08-1-0317, DMR-0704022
U.S. Department of Energy	DE-AC02-05CH11231
Defense Advanced Research Projects Agency

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Creation of a two-dimensional electron gas at an oxide interface on silicon",

abstract = "In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlO3/SrTiO3 (LAO/STO) heterointerfaces grown directly on (001) Silicon (Si) substrates. The room-temperature electrical transport properties of LAO/STO heterointerfaces on Si are comparable with those formed from a SrTiO3 bulk single crystal. The ability to form reversible conducting nanostructures directly on Si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established Si-based platforms.",

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AU - Bogorin, D. F.

AU - Cen, C.

AU - Felker, D. A.

AU - Zhang, Y.

AU - Nelson, C. T.

AU - Bark, C. W.

AU - Folkman, C. M.

AU - Pan, X. Q.

AU - Rzchowski, M. S.

AU - Levy, J.

AU - Eom, C. B.

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AB - In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlO3/SrTiO3 (LAO/STO) heterointerfaces grown directly on (001) Silicon (Si) substrates. The room-temperature electrical transport properties of LAO/STO heterointerfaces on Si are comparable with those formed from a SrTiO3 bulk single crystal. The ability to form reversible conducting nanostructures directly on Si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established Si-based platforms.

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Creation of a two-dimensional electron gas at an oxide interface on silicon

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