CrB2 Schottky barrier contacts on n-GaN

Rohit Khanna, S. J. Pearton, F. Ren, I. Kravchenko

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6 Scopus citations

Abstract

The annealing (25-700°C) and measurement temperature (25-150°C) dependence of Schottky contact characteristics on n-GaN using a CrB 2/Ti/Au metallization scheme were examined with current-voltage (I-V), scanning electron microscopy, and Auger electron spectroscopy measurements. The Schottky barrier height increased with anneal temperature up to 200°C (maximum value of 0.62 eV), but decreased to 0.42 eV after annealing at 700°C. The reverse breakdown voltage of diodes with these contacts showed a similar dependence on anneal temperature. The barrier height showed only minor changes with measurement temperature up to 150°C. The elemental profile obtained from samples annealed at 350°C showed limited Ti diffusion into the gold layer. Annealing at 700°C produced more significant diffusion of Ti. These contacts show promise for applications requiring good thermal stability, such as power amplifiers.

Original languageEnglish
Pages (from-to)G804-G807
JournalJournal of the Electrochemical Society
Volume152
Issue number11
DOIs
StatePublished - 2005
Externally publishedYes

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