Abstract
The annealing (25-700°C) and measurement temperature (25-150°C) dependence of Schottky contact characteristics on n-GaN using a CrB 2/Ti/Au metallization scheme were examined with current-voltage (I-V), scanning electron microscopy, and Auger electron spectroscopy measurements. The Schottky barrier height increased with anneal temperature up to 200°C (maximum value of 0.62 eV), but decreased to 0.42 eV after annealing at 700°C. The reverse breakdown voltage of diodes with these contacts showed a similar dependence on anneal temperature. The barrier height showed only minor changes with measurement temperature up to 150°C. The elemental profile obtained from samples annealed at 350°C showed limited Ti diffusion into the gold layer. Annealing at 700°C produced more significant diffusion of Ti. These contacts show promise for applications requiring good thermal stability, such as power amplifiers.
Original language | English |
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Pages (from-to) | G804-G807 |
Journal | Journal of the Electrochemical Society |
Volume | 152 |
Issue number | 11 |
DOIs | |
State | Published - 2005 |
Externally published | Yes |