TY - JOUR
T1 - Cracking and phase transformation in silicon during nanoindentation
AU - Jang, Jae Il
AU - Wen, Songqing
AU - Lance, M. J.
AU - Anderson, I. M.
AU - Pharr, G. M.
PY - 2003
Y1 - 2003
N2 - Nanoindentation experiments were performed on single crystals of (100) Si using a series of triangular pyramidal indenters with centerline-to-face angles in the range 35.3° to 85.0°. The influences of the indenter geometry on cracking and phase transformation during indentation were systematically studied. Although reducing the indenter angle reduces the threshold load for cracking and increases the crack lengths, c, at a given indention load, P, the frequently observed relation between P and c3/2 is maintained for all of the indenters over a wide range of load. Features in the nanoindentation load-displacement curves in conjunction with Raman spectroscopy of the crystalline and amorphous phases in and around the contact impression show that the indenter geometry also plays a role in the phase transformation behavior. Results are discussed in relation to prevailing ideas about indentation cracking and phase transformation in silicon.
AB - Nanoindentation experiments were performed on single crystals of (100) Si using a series of triangular pyramidal indenters with centerline-to-face angles in the range 35.3° to 85.0°. The influences of the indenter geometry on cracking and phase transformation during indentation were systematically studied. Although reducing the indenter angle reduces the threshold load for cracking and increases the crack lengths, c, at a given indention load, P, the frequently observed relation between P and c3/2 is maintained for all of the indenters over a wide range of load. Features in the nanoindentation load-displacement curves in conjunction with Raman spectroscopy of the crystalline and amorphous phases in and around the contact impression show that the indenter geometry also plays a role in the phase transformation behavior. Results are discussed in relation to prevailing ideas about indentation cracking and phase transformation in silicon.
UR - http://www.scopus.com/inward/record.url?scp=2442428353&partnerID=8YFLogxK
U2 - 10.1557/proc-795-u8.15
DO - 10.1557/proc-795-u8.15
M3 - Conference article
AN - SCOPUS:2442428353
SN - 0272-9172
VL - 795
SP - 313
EP - 318
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Thin Films - Stresses and Mechanical Properties X
Y2 - 1 December 2003 through 5 December 2003
ER -