Crack-like sources of dislocation nucleation and multiplication in thin films

D. E. Jesson, K. M. Chen, S. J. Pennycook, T. Thundat, R. J. Warmack

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

With the combination of the height sensitivity of atomic force microscopy and the strain sensitivity of transmission electron microscopy, it is shown that near singular stress concentrations can develop naturally in strained epitaxial films. These crack-like instabilities are identified as the sources of dislocation nucleation and multiplication in films of high misfit. This link between morphological instability and dislocation nucleation provides a method for studying the basic micromechanisms that determine the strength and mechanical properties of materials.

Original languageEnglish
Pages (from-to)1161-1163
Number of pages3
JournalScience
Volume268
Issue number5214
DOIs
StatePublished - May 26 1995

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