Abstract
Van der Waals semiconductors (vdWS) offer superior mechanical and electrical properties and are promising for flexible microelectronics when combined with polymer substrates. However, the self-passivated vdWS surfaces and their weak adhesion to polymers tend to cause interfacial sliding and wrinkling, and thus, are still challenging the reliability of vdWS-based flexible devices. Here, an effective covalent vdWS–polymer lamination method with high stretch tolerance and excellent electronic performance is reported. Using molybdenum disulfide (MoS2)and polydimethylsiloxane (PDMS) as a case study, gold–chalcogen bonding and mercapto silane bridges are leveraged. The resulting composite structures exhibit more uniform and stronger interfacial adhesion. This enhanced coupling also enables the observation of a theoretically predicted tension-induced band structure transition in MoS2. Moreover, no obvious degradation in the devices’ structural and electrical properties is identified after numerous mechanical cycle tests. This high-quality lamination enhances the reliability of vdWS-based flexible microelectronics, accelerating their practical applications in biomedical research and consumer electronics.
Original language | English |
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Journal | Small |
DOIs | |
State | Accepted/In press - 2024 |
Funding
This work was supported by National Science Foundation DMR‐2105126, ECCS‐2238564, faculty start‐up grant of Georgia State University, and Research Initiation Grant award of Georgia State University. G.W. and S.L. acknowledges the financial support from Georgia State University RISE award. MoS synthesis and processing was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering. MoS FET devices fabrication was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. G. W. acknowledges the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE‐SC0019043. P. D. acknowledges the funding support by the Vehicle Technologies Office (VTO) in the Department of Energy (VTO CPS 36928). 2 2
Funders | Funder number |
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National Science Foundation DMR‐2105126 | ECCS‐2238564 |
U.S. Department of Energy | VTO CPS 36928 |
Office of Science | DE‐SC0019043 |
Basic Energy Sciences | |
Georgia State University | |
Division of Materials Sciences and Engineering |
Keywords
- covalent lamination
- flexible device
- van der Waals semiconductors