Covalently-Bonded Laminar Assembly of Van der Waals Semiconductors with Polymers: Toward High-Performance Flexible Devices

Ningxin Li, Tara Jabegu, Rui He, Seokjoon Yun, Sujoy Ghosh, Diren Maraba, Olugbenga Olunloyo, Hedi Ma, Aisha Okmi, Kai Xiao, Gangli Wang, Pei Dong, Sidong Lei

Research output: Contribution to journalArticlepeer-review

Abstract

Van der Waals semiconductors (vdWS) offer superior mechanical and electrical properties and are promising for flexible microelectronics when combined with polymer substrates. However, the self-passivated vdWS surfaces and their weak adhesion to polymers tend to cause interfacial sliding and wrinkling, and thus, are still challenging the reliability of vdWS-based flexible devices. Here, an effective covalent vdWS–polymer lamination method with high stretch tolerance and excellent electronic performance is reported. Using molybdenum disulfide (MoS2)and polydimethylsiloxane (PDMS) as a case study, gold–chalcogen bonding and mercapto silane bridges are leveraged. The resulting composite structures exhibit more uniform and stronger interfacial adhesion. This enhanced coupling also enables the observation of a theoretically predicted tension-induced band structure transition in MoS2. Moreover, no obvious degradation in the devices’ structural and electrical properties is identified after numerous mechanical cycle tests. This high-quality lamination enhances the reliability of vdWS-based flexible microelectronics, accelerating their practical applications in biomedical research and consumer electronics.

Original languageEnglish
JournalSmall
DOIs
StateAccepted/In press - 2024

Funding

This work was supported by National Science Foundation DMR‐2105126, ECCS‐2238564, faculty start‐up grant of Georgia State University, and Research Initiation Grant award of Georgia State University. G.W. and S.L. acknowledges the financial support from Georgia State University RISE award. MoS synthesis and processing was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering. MoS FET devices fabrication was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. G. W. acknowledges the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE‐SC0019043. P. D. acknowledges the funding support by the Vehicle Technologies Office (VTO) in the Department of Energy (VTO CPS 36928). 2 2

FundersFunder number
National Science Foundation DMR‐2105126ECCS‐2238564
U.S. Department of EnergyVTO CPS 36928
Office of ScienceDE‐SC0019043
Basic Energy Sciences
Georgia State University
Division of Materials Sciences and Engineering

    Keywords

    • covalent lamination
    • flexible device
    • van der Waals semiconductors

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