Corrosion of CVP silicon carbide in 500°C supercritical water

E. Barringer; Z. Faiztompkins; H. Feinroth; T. Allen; M. Lance; H. Meyer; L. Walker; E. Lara-Curzio

doi:10.1111/j.1551-2916.2006.01401.x

Corrosion of CVP silicon carbide in 500°C supercritical water

E. Barringer, Z. Faiztompkins, H. Feinroth, T. Allen, M. Lance, H. Meyer, L. Walker, E. Lara-Curzio

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65 Scopus citations

Abstract

A high-purity CVD β-SiC showed a relatively low corrosion rate in deoxygenated supercritical water at 500°C. The corrosion rate was lower than that previously reported for CVD SiC in 360°C water and much lower than that reported for sintered and reaction-bonded SiC. The present study confirmed that CVD SiC was preferentially attacked at the grain boundaries. Analytical examinations did not reveal the presence of a measurable oxide scale. As a result, it is believed that corrosion of the high-purity SiC occurred via hydrolysis to hydrated silica species at the surface that were rapidly dissolved into the supercritical water.

Original language	English
Pages (from-to)	315-318
Number of pages	4
Journal	Journal of the American Ceramic Society
Volume	90
Issue number	1
DOIs	https://doi.org/10.1111/j.1551-2916.2006.01401.x
State	Published - Jan 2007

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abstract = "A high-purity CVD β-SiC showed a relatively low corrosion rate in deoxygenated supercritical water at 500°C. The corrosion rate was lower than that previously reported for CVD SiC in 360°C water and much lower than that reported for sintered and reaction-bonded SiC. The present study confirmed that CVD SiC was preferentially attacked at the grain boundaries. Analytical examinations did not reveal the presence of a measurable oxide scale. As a result, it is believed that corrosion of the high-purity SiC occurred via hydrolysis to hydrated silica species at the surface that were rapidly dissolved into the supercritical water.",

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AU - Barringer, E.

AU - Faiztompkins, Z.

AU - Feinroth, H.

AU - Allen, T.

AU - Lance, M.

AU - Meyer, H.

AU - Walker, L.

AU - Lara-Curzio, E.

PY - 2007/1

Y1 - 2007/1

N2 - A high-purity CVD β-SiC showed a relatively low corrosion rate in deoxygenated supercritical water at 500°C. The corrosion rate was lower than that previously reported for CVD SiC in 360°C water and much lower than that reported for sintered and reaction-bonded SiC. The present study confirmed that CVD SiC was preferentially attacked at the grain boundaries. Analytical examinations did not reveal the presence of a measurable oxide scale. As a result, it is believed that corrosion of the high-purity SiC occurred via hydrolysis to hydrated silica species at the surface that were rapidly dissolved into the supercritical water.

AB - A high-purity CVD β-SiC showed a relatively low corrosion rate in deoxygenated supercritical water at 500°C. The corrosion rate was lower than that previously reported for CVD SiC in 360°C water and much lower than that reported for sintered and reaction-bonded SiC. The present study confirmed that CVD SiC was preferentially attacked at the grain boundaries. Analytical examinations did not reveal the presence of a measurable oxide scale. As a result, it is believed that corrosion of the high-purity SiC occurred via hydrolysis to hydrated silica species at the surface that were rapidly dissolved into the supercritical water.

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Corrosion of CVP silicon carbide in 500°C supercritical water

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