Correlative Nanoscale Imaging of Strained hBN Spin Defects

David Curie; Jaron T. Krogel; Lukas Cavar; Abhishek Solanki; Pramey Upadhyaya; Tongcang Li; Yun Yi Pai; Michael Chilcote; Vasudevan Iyer; Alexander Puretzky; Ilia Ivanov; Mao Hua Du; Fernando Reboredo; Benjamin Lawrie

doi:10.1021/acsami.2c11886

Correlative Nanoscale Imaging of Strained hBN Spin Defects

David Curie, Jaron T. Krogel, Lukas Cavar, Abhishek Solanki, Pramey Upadhyaya, Tongcang Li, Yun Yi Pai, Michael Chilcote, Vasudevan Iyer, Alexander Puretzky, Ilia Ivanov, Mao Hua Du, Fernando Reboredo, Benjamin Lawrie

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Spin defects like the negatively charged boron vacancy color center (VB-) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, the effect of strain on VB- color centers in hBN is revealed with correlative cathodoluminescence and photoluminescence microscopies. Strong localized enhancement and redshifting of the VB- luminescence is observed at creases, consistent with density functional theory calculations showing VB- migration toward regions with moderate uniaxial compressive strain. The ability to manipulate spin defects with highly localized strain is critical to the development of practical 2D quantum devices and quantum sensors.

Original language	English
Pages (from-to)	41361-41368
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	14
Issue number	36
DOIs	https://doi.org/10.1021/acsami.2c11886
State	Published - Sep 14 2022

Funding

This research was sponsored by the U. S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. The PL and CL microscopies were performed at the Center for Nanophase Materials Sciences, which is a U.S. Department of Energy Office of Science User Facility. Sample preparation was supported by the DARPA QUEST Program and by the U.S. Department of Energy, Office of Science, National Quantum Information Science Research Centers, Quantum Science Center. Student support was provided by the U.S. Department of Energy, Office of Science, Office of Workforce Development for Teachers and Scientists, Office of Science Graduate Student Research (SCGSR) program, and by NSF award DMR-1747426. The SCGSR program is administered by the Oak Ridge Institute for Science and Education for the DOE under contract number DE-SC0014664. This research used resources of the Compute and Data Environment for Science (CADES) at the Oak Ridge National Laboratory, which is supported by the Office of Science of the U.S. Department of Energy under Contract no. DE-AC05-00OR22725. The authors would like to acknowledge Vladimir Shalaev for ODMR spectroscopy support. This manuscript has been authored by UT-Battelle, LLC, under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan ( http://energy.gov/downloads/doe-public-access-plan ).

Keywords

cathodoluminescence
hBN
nanophotonics
quantum sensors
spin defects

Access to Document

10.1021/acsami.2c11886

Cite this

@article{aa65f3ce0c6b482f813bb142b6190e21,

title = "Correlative Nanoscale Imaging of Strained hBN Spin Defects",

abstract = "Spin defects like the negatively charged boron vacancy color center (VB-) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, the effect of strain on VB- color centers in hBN is revealed with correlative cathodoluminescence and photoluminescence microscopies. Strong localized enhancement and redshifting of the VB- luminescence is observed at creases, consistent with density functional theory calculations showing VB- migration toward regions with moderate uniaxial compressive strain. The ability to manipulate spin defects with highly localized strain is critical to the development of practical 2D quantum devices and quantum sensors.",

keywords = "cathodoluminescence, hBN, nanophotonics, quantum sensors, spin defects",

author = "David Curie and Krogel, {Jaron T.} and Lukas Cavar and Abhishek Solanki and Pramey Upadhyaya and Tongcang Li and Pai, {Yun Yi} and Michael Chilcote and Vasudevan Iyer and Alexander Puretzky and Ilia Ivanov and Du, {Mao Hua} and Fernando Reboredo and Benjamin Lawrie",

note = "Publisher Copyright: {\textcopyright} 2022 American Chemical Society.",

year = "2022",

month = sep,

day = "14",

doi = "10.1021/acsami.2c11886",

language = "English",

volume = "14",

pages = "41361--41368",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "36",

}

TY - JOUR

T1 - Correlative Nanoscale Imaging of Strained hBN Spin Defects

AU - Curie, David

AU - Krogel, Jaron T.

AU - Cavar, Lukas

AU - Solanki, Abhishek

AU - Upadhyaya, Pramey

AU - Li, Tongcang

AU - Pai, Yun Yi

AU - Chilcote, Michael

AU - Iyer, Vasudevan

AU - Puretzky, Alexander

AU - Ivanov, Ilia

AU - Du, Mao Hua

AU - Reboredo, Fernando

AU - Lawrie, Benjamin

PY - 2022/9/14

Y1 - 2022/9/14

N2 - Spin defects like the negatively charged boron vacancy color center (VB-) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, the effect of strain on VB- color centers in hBN is revealed with correlative cathodoluminescence and photoluminescence microscopies. Strong localized enhancement and redshifting of the VB- luminescence is observed at creases, consistent with density functional theory calculations showing VB- migration toward regions with moderate uniaxial compressive strain. The ability to manipulate spin defects with highly localized strain is critical to the development of practical 2D quantum devices and quantum sensors.

AB - Spin defects like the negatively charged boron vacancy color center (VB-) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, the effect of strain on VB- color centers in hBN is revealed with correlative cathodoluminescence and photoluminescence microscopies. Strong localized enhancement and redshifting of the VB- luminescence is observed at creases, consistent with density functional theory calculations showing VB- migration toward regions with moderate uniaxial compressive strain. The ability to manipulate spin defects with highly localized strain is critical to the development of practical 2D quantum devices and quantum sensors.

KW - cathodoluminescence

KW - hBN

KW - nanophotonics

KW - quantum sensors

KW - spin defects

UR - http://www.scopus.com/inward/record.url?scp=85137908145&partnerID=8YFLogxK

U2 - 10.1021/acsami.2c11886

DO - 10.1021/acsami.2c11886

M3 - Article

C2 - 36048915

AN - SCOPUS:85137908145

SN - 1944-8244

VL - 14

SP - 41361

EP - 41368

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 36

ER -

Correlative Nanoscale Imaging of Strained hBN Spin Defects

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this