Correlation of Raman spectra with optical and electronic properties of a - Si:H

V. Kh Kudoyarova, O. I. Konkov, E. I. Terukov, A. P. Sokolov, A. P. Shebanin

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Raman scattering spectra, optical and electronic properties of a-Si:H films, prepared by HF decomposition of silane-argon mixture at various substrate temperatures Ts (160<Ts<430°C) have been measured. It was shown, that variation of Ts has a stronger effect on the medium or intermediate range than on the short range order (dispersion of the angle between the bonds). An analysis of the medium range order (the intensity of the low frequency TA mode) proves to be very important for understanding the electronic properties of a-Si:H films.

Original languageEnglish
Pages (from-to)205-207
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 1
DOIs
StatePublished - Dec 1 1989
Externally publishedYes

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