Abstract
Raman scattering spectra, optical and electronic properties of a-Si:H films, prepared by HF decomposition of silane-argon mixture at various substrate temperatures Ts (160<Ts<430°C) have been measured. It was shown, that variation of Ts has a stronger effect on the medium or intermediate range than on the short range order (dispersion of the angle between the bonds). An analysis of the medium range order (the intensity of the low frequency TA mode) proves to be very important for understanding the electronic properties of a-Si:H films.
| Original language | English |
|---|---|
| Pages (from-to) | 205-207 |
| Number of pages | 3 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 114 |
| Issue number | PART 1 |
| DOIs | |
| State | Published - Dec 1 1989 |
| Externally published | Yes |