Correlation between morphological and electrical characteristics of Pt/SrBi₂Ta₂O₉/CeO₂/Si capacitors

We have fabricated a metal/ferroelectric/insulator/semiconductor (MFIS) capacitor using Pt/SrBi₂Ta₂O₉(SBT)/CeO₂/Si. The CeO₂ thin films were deposited by reactive sputtering at room temperature and annealed at 800, 900, and 1100°C for 5 min in a halogen lamp furnace. The SBT thin films were spin coated by metal-organic decomposition (MOD) method on the annealed CeO₂/Si substrates. The surface morphology of SBT films was affected by the substrate roughness of CeO₂ thin films. The leakage current densities of SBT films on the as-deposited and the 900°C annealed CeO₂ films were 1.9×10^-6 A/cm² and 6.1×10^-9A/cm², respectively at -10 V.