Abstract
We have fabricated a metal/ferroelectric/insulator/semiconductor (MFIS) capacitor using Pt/SrBi2Ta2O9(SBT)/CeO2/Si. The CeO2 thin films were deposited by reactive sputtering at room temperature and annealed at 800, 900, and 1100°C for 5 min in a halogen lamp furnace. The SBT thin films were spin coated by metal-organic decomposition (MOD) method on the annealed CeO2/Si substrates. The surface morphology of SBT films was affected by the substrate roughness of CeO2 thin films. The leakage current densities of SBT films on the as-deposited and the 900°C annealed CeO2 films were 1.9×10-6 A/cm2 and 6.1×10-9A/cm2, respectively at -10 V.
Original language | English |
---|---|
Pages (from-to) | 135-140 |
Number of pages | 6 |
Journal | Ferroelectrics |
Volume | 232 |
Issue number | 1-4 |
DOIs | |
State | Published - 1999 |
Externally published | Yes |
Keywords
- CeO
- Ferroelectric gate
- MFIS
- MFS
- Morphology
- SrBiTaO