Correlation between morphological and electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si capacitors

Ho Nyung Lee, Sung Ho Choh, Dong Suk Shin, Yong Tae Kim

Research output: Contribution to journalArticlepeer-review

Abstract

We have fabricated a metal/ferroelectric/insulator/semiconductor (MFIS) capacitor using Pt/SrBi2Ta2O9(SBT)/CeO2/Si. The CeO2 thin films were deposited by reactive sputtering at room temperature and annealed at 800, 900, and 1100°C for 5 min in a halogen lamp furnace. The SBT thin films were spin coated by metal-organic decomposition (MOD) method on the annealed CeO2/Si substrates. The surface morphology of SBT films was affected by the substrate roughness of CeO2 thin films. The leakage current densities of SBT films on the as-deposited and the 900°C annealed CeO2 films were 1.9×10-6 A/cm2 and 6.1×10-9A/cm2, respectively at -10 V.

Original languageEnglish
Pages (from-to)135-140
Number of pages6
JournalFerroelectrics
Volume232
Issue number1-4
DOIs
StatePublished - 1999
Externally publishedYes

Keywords

  • CeO
  • Ferroelectric gate
  • MFIS
  • MFS
  • Morphology
  • SrBiTaO

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