Coordination determination of In on Si(100) from synchrotron photoemission studies

D. H. Rich; A. Samsavar; T. Miller; H. F. Lin; T. C. Chiang; J. E. Sundgren; J. E. Greene

doi:10.1103/PhysRevLett.58.579

Coordination determination of In on Si(100) from synchrotron photoemission studies

D. H. Rich, A. Samsavar, T. Miller, H. F. Lin, T. C. Chiang, J. E. Sundgren, J. E. Greene

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Abstract

High-resolution core-level photoemission spectroscopy was used to study the initial growth and interaction of In on Si(100). The InSi bonding coordination number, determined by quantification of the number of Si surface atoms selectively modified in the presence of an In adatom, is 3 for very low In coverages, and decreases to 2 for (1/2) -monolayer coverage. The results are consistent with a structural model deduced from electron diffraction, Auger, and scanning electron microscopy studies.

Original language	English
Pages (from-to)	579-582
Number of pages	4
Journal	Physical Review Letters
Volume	58
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevLett.58.579
State	Published - 1987
Externally published	Yes

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title = "Coordination determination of In on Si(100) from synchrotron photoemission studies",

abstract = "High-resolution core-level photoemission spectroscopy was used to study the initial growth and interaction of In on Si(100). The InSi bonding coordination number, determined by quantification of the number of Si surface atoms selectively modified in the presence of an In adatom, is 3 for very low In coverages, and decreases to 2 for (1/2) -monolayer coverage. The results are consistent with a structural model deduced from electron diffraction, Auger, and scanning electron microscopy studies.",

author = "Rich, {D. H.} and A. Samsavar and T. Miller and Lin, {H. F.} and Chiang, {T. C.} and Sundgren, {J. E.} and Greene, {J. E.}",

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AU - Rich, D. H.

AU - Samsavar, A.

AU - Miller, T.

AU - Lin, H. F.

AU - Chiang, T. C.

AU - Sundgren, J. E.

AU - Greene, J. E.

PY - 1987

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AB - High-resolution core-level photoemission spectroscopy was used to study the initial growth and interaction of In on Si(100). The InSi bonding coordination number, determined by quantification of the number of Si surface atoms selectively modified in the presence of an In adatom, is 3 for very low In coverages, and decreases to 2 for (1/2) -monolayer coverage. The results are consistent with a structural model deduced from electron diffraction, Auger, and scanning electron microscopy studies.

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Coordination determination of In on Si(100) from synchrotron photoemission studies

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