TY - JOUR
T1 - Control of polystyrene-block-poly(methyl methacrylate) directed self-Assembly by laser-induced millisecond thermal annealing
AU - Jacobs, Alan G.
AU - Jung, Byungki
AU - Jiang, Jing
AU - Ober, Christopher K.
AU - Thompson, Michael O.
N1 - Publisher Copyright:
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE).
PY - 2015/7/1
Y1 - 2015/7/1
N2 - Directed self-assembly of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) during laser thermal annealing at peak temperatures of 300-C-800-C for dwells of 1-10 ms has been explored. The enhanced mobility of polymer chains at these temperatures improves registration compared with conventional thermal anneals. PS-b-PMMA films (forming 15-nm line?space standing lamellae) were cast on chemically patterned substrates with a copolymer neutral layer and annealed by laser and hot plate. Annealing by hot plate or multiple laser scans resulted in well-aligned features over micron length scales. By laser annealing multiple times, defectivity was reduced by 60%. However, laser annealing for only 10 ms before performing a hot plate anneal reduced defectivity by 80%. We believe that this reduction arises from improved interfacial alignment of the film to the template during laser annealing near the order-disorder transition.
AB - Directed self-assembly of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) during laser thermal annealing at peak temperatures of 300-C-800-C for dwells of 1-10 ms has been explored. The enhanced mobility of polymer chains at these temperatures improves registration compared with conventional thermal anneals. PS-b-PMMA films (forming 15-nm line?space standing lamellae) were cast on chemically patterned substrates with a copolymer neutral layer and annealed by laser and hot plate. Annealing by hot plate or multiple laser scans resulted in well-aligned features over micron length scales. By laser annealing multiple times, defectivity was reduced by 60%. However, laser annealing for only 10 ms before performing a hot plate anneal reduced defectivity by 80%. We believe that this reduction arises from improved interfacial alignment of the film to the template during laser annealing near the order-disorder transition.
KW - chemoepitaxy
KW - defectivity
KW - directed self-assembly
KW - laser spike annealing
KW - order-disorder transition.
KW - PS-b-PMMA
UR - https://www.scopus.com/pages/publications/84953897556
U2 - 10.1117/1.JMM.14.3.031205
DO - 10.1117/1.JMM.14.3.031205
M3 - Article
AN - SCOPUS:84953897556
SN - 1932-5150
VL - 14
JO - Journal of Micro/ Nanolithography, MEMS, and MOEMS
JF - Journal of Micro/ Nanolithography, MEMS, and MOEMS
IS - 3
M1 - 031205
ER -