Control of electron transport related defects in in situ fabricated single wall carbon nanotube devices

Zhixian Zhou; R. Jin; Gyula Eres; Alaska Subedi; D. Mandrus

doi:10.1063/1.2354450

Control of electron transport related defects in in situ fabricated single wall carbon nanotube devices

Zhixian Zhou, R. Jin, Gyula Eres, Alaska Subedi, D. Mandrus

Quantum Heterostructures

Oak Ridge National Laboratory

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Metallic single wall carbon nanotube devices were characterized using low temperature transport measurements to study how the growth conditions affect defect formation in carbon nanotubes. Suspended carbon nanotube devices were grown in situ by a molecular beam growth method on a pair of catalyst islands located on opposing Au electrodes fabricated by electron beam lithography. The authors present experimental evidence that defect formation in carbon nanotubes, in addition to the well known growth temperature dependence, is also affected by the nature and the composition of the carbon growth gases.

Original language	English
Article number	133124
Journal	Applied Physics Letters
Volume	89
Issue number	13
DOIs	https://doi.org/10.1063/1.2354450
State	Published - 2006

Funding

The authors would like to thank Pam Fleming for technical assistance. Research was sponsored by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy, under Contract No. DE-AC05-00OR22725 with Oak Ridge National Laboratory, managed and operated by UT-Battelle, LLC.

Funders	Funder number
U.S. Department of Energy	DE-AC05-00OR22725
Basic Energy Sciences
Oak Ridge National Laboratory
Division of Materials Sciences and Engineering

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10.1063/1.2354450

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abstract = "Metallic single wall carbon nanotube devices were characterized using low temperature transport measurements to study how the growth conditions affect defect formation in carbon nanotubes. Suspended carbon nanotube devices were grown in situ by a molecular beam growth method on a pair of catalyst islands located on opposing Au electrodes fabricated by electron beam lithography. The authors present experimental evidence that defect formation in carbon nanotubes, in addition to the well known growth temperature dependence, is also affected by the nature and the composition of the carbon growth gases.",

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Control of electron transport related defects in in situ fabricated single wall carbon nanotube devices

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