Control of diamond nucleation on SiC by ion beam treatment of the surface

Carl J. McHargue; S. Abraham; R. E. Clausing; L. Heatherly; J. D. Hunn

Control of diamond nucleation on SiC by ion beam treatment of the surface

Carl J. McHargue, S. Abraham, R. E. Clausing, L. Heatherly, J. D. Hunn

Research output: Contribution to conference › Paper › peer-review

Abstract

Ion implantation of Si or C into single crystals of 6H SiC inhibits the nucleation rate of diamond films subsequently deposited onto these substrates by the hot-filament assisted CVD process. The rate of nucleation decreases with increasing ion fluence and is completely suppressed at a fluence that produces an amorphous SiC surface. Masks have been used to produce patterns on the substrate that result in patterned diamond components. The diamond film can then be removed by dissolving the substrate in a suitable etchant.

Original language	English
Pages	41-50
Number of pages	10
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1995 9th International Conference on Surface Modification Technologies - Cleveland, OH, USA Duration: Oct 29 1995 → Nov 2 1995

Conference

Conference	Proceedings of the 1995 9th International Conference on Surface Modification Technologies
City	Cleveland, OH, USA
Period	10/29/95 → 11/2/95

Cite this

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title = "Control of diamond nucleation on SiC by ion beam treatment of the surface",

abstract = "Ion implantation of Si or C into single crystals of 6H SiC inhibits the nucleation rate of diamond films subsequently deposited onto these substrates by the hot-filament assisted CVD process. The rate of nucleation decreases with increasing ion fluence and is completely suppressed at a fluence that produces an amorphous SiC surface. Masks have been used to produce patterns on the substrate that result in patterned diamond components. The diamond film can then be removed by dissolving the substrate in a suitable etchant.",

author = "McHargue, {Carl J.} and S. Abraham and Clausing, {R. E.} and L. Heatherly and Hunn, {J. D.}",

year = "1996",

language = "English",

pages = "41--50",

note = "Proceedings of the 1995 9th International Conference on Surface Modification Technologies ; Conference date: 29-10-1995 Through 02-11-1995",

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TY - CONF

T1 - Control of diamond nucleation on SiC by ion beam treatment of the surface

AU - McHargue, Carl J.

AU - Abraham, S.

AU - Clausing, R. E.

AU - Heatherly, L.

AU - Hunn, J. D.

PY - 1996

Y1 - 1996

N2 - Ion implantation of Si or C into single crystals of 6H SiC inhibits the nucleation rate of diamond films subsequently deposited onto these substrates by the hot-filament assisted CVD process. The rate of nucleation decreases with increasing ion fluence and is completely suppressed at a fluence that produces an amorphous SiC surface. Masks have been used to produce patterns on the substrate that result in patterned diamond components. The diamond film can then be removed by dissolving the substrate in a suitable etchant.

AB - Ion implantation of Si or C into single crystals of 6H SiC inhibits the nucleation rate of diamond films subsequently deposited onto these substrates by the hot-filament assisted CVD process. The rate of nucleation decreases with increasing ion fluence and is completely suppressed at a fluence that produces an amorphous SiC surface. Masks have been used to produce patterns on the substrate that result in patterned diamond components. The diamond film can then be removed by dissolving the substrate in a suitable etchant.

UR - http://www.scopus.com/inward/record.url?scp=0029722165&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029722165

SP - 41

EP - 50

T2 - Proceedings of the 1995 9th International Conference on Surface Modification Technologies

Y2 - 29 October 1995 through 2 November 1995

ER -

Control of diamond nucleation on SiC by ion beam treatment of the surface

Abstract

Conference

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