Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

T. J. Grassman; M. R. Brenner; S. Rajagopalan; R. Unocic; R. Dehoff; M. Mills; H. Fraser; S. A. Ringel

doi:10.1063/1.3154548

Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

T. J. Grassman, M. R. Brenner, S. Rajagopalan, R. Unocic, R. Dehoff, M. Mills, H. Fraser, S. A. Ringel

Research output: Contribution to journal › Article › peer-review

144 Scopus citations

Abstract

GaP films were grown on offcut Si(001) substrates using migration enhanced epitaxy nucleation followed by molecular beam epitaxy, with the intent of controlling and eliminating the formation of heterovalent (III-V/IV) nucleation-related defects-antiphase domains, stacking faults, and microtwins. Analysis of these films via reflection high-energy electron diffraction, atomic force microscopy, and both cross-sectional and plan-view transmission electron microscopies indicate high-quality GaP layers on Si that portend a virtual GaP substrate technology, in which the aforementioned extended defects are simultaneously eliminated. The only prevalent remaining defects are the expected misfit dislocations due to the GaP-Si lattice mismatch.

Original language	English
Article number	232106
Journal	Applied Physics Letters
Volume	94
Issue number	23
DOIs	https://doi.org/10.1063/1.3154548
State	Published - 2009
Externally published	Yes

Funding

All or parts of this work received support from the Army Research Office (Grant No. DAAD 19–01–0588), Air Force Research Laboratory at Kirtland AFB (Grant No. FA9453-08C-0172), Air Force Office of Scientific Research (Grant No. FA9550-06-1-0557), the Ohio Wright Center for Photovoltaics Innovation and Commercialization, and Intel Corporation.

Funders	Funder number
Air Force Office of Scientific Research
Army Research Office	DAAD 19–01–0588
Air Force Research Laboratory	FA9453-08C-0172

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abstract = "GaP films were grown on offcut Si(001) substrates using migration enhanced epitaxy nucleation followed by molecular beam epitaxy, with the intent of controlling and eliminating the formation of heterovalent (III-V/IV) nucleation-related defects-antiphase domains, stacking faults, and microtwins. Analysis of these films via reflection high-energy electron diffraction, atomic force microscopy, and both cross-sectional and plan-view transmission electron microscopies indicate high-quality GaP layers on Si that portend a virtual GaP substrate technology, in which the aforementioned extended defects are simultaneously eliminated. The only prevalent remaining defects are the expected misfit dislocations due to the GaP-Si lattice mismatch.",

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AU - Unocic, R.

AU - Dehoff, R.

AU - Mills, M.

AU - Fraser, H.

AU - Ringel, S. A.

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Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

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