Contrast Mechanisms in Secondary Electron e-Beam-Induced Current (SEEBIC) Imaging

Ondrej Dyck; Jacob L. Swett; Charalambos Evangeli; Andrew R. Lupini; Jan Mol; Stephen Jesse

doi:10.1017/S1431927622000824

Contrast Mechanisms in Secondary Electron e-Beam-Induced Current (SEEBIC) Imaging

Ondrej Dyck, Jacob L. Swett, Charalambos Evangeli, Andrew R. Lupini, Jan Mol, Stephen Jesse

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Over the last few years, a new mode for imaging in the scanning transmission electron microscope (STEM) has gained attention as it permits the direct visualization of sample conductivity and electrical connectivity. When the electron beam (e-beam) is focused on the sample in the STEM, secondary electrons (SEs) are generated. If the sample is conductive and electrically connected to an amplifier, the SE current can be measured as a function of the e-beam position. This scenario is similar to the better-known scanning electron microscopy-based technique, electron beam-induced current imaging, except that the signal in the STEM is generated by the emission of SEs, hence the name secondary electron e-beam-induced current (SEEBIC), and in this case, the current flows in the opposite direction. Here, we provide a brief review of recent work in this area, examine the various contrast generation mechanisms associated with SEEBIC, and illustrate its use for the characterization of graphene nanoribbon devices.

Original language	English
Pages (from-to)	1567-1583
Number of pages	17
Journal	Microscopy and Microanalysis
Volume	28
Issue number	5
DOIs	https://doi.org/10.1017/S1431927622000824
State	Published - Oct 3 2022

Funding

This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division (O.D. A.R.L., S.J.) and was performed at the Center for Nanophase Materials Sciences (CNMS), a U.S. Department of Energy, Office of Science User Facility (O.D.). J.A.M. was supported through the UKRI Future Leaders Fellowship, Grant No. MR/S032541/1, with in-kind support from the Royal Academy of Engineering. The authors acknowledge the use of characterization facilities within the David Cockayne Centre for Electron Microscopy, Department of Materials, University of Oxford, alongside financial support provided by the Henry Royce Institute (Grant ref. EP/R010145/1).

Keywords

SEEBIC
graphene nanodevice
resistive contrast imaging
scanning transmission electron microscopy
secondary electron e-beam-induced current

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10.1017/S1431927622000824

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abstract = "Over the last few years, a new mode for imaging in the scanning transmission electron microscope (STEM) has gained attention as it permits the direct visualization of sample conductivity and electrical connectivity. When the electron beam (e-beam) is focused on the sample in the STEM, secondary electrons (SEs) are generated. If the sample is conductive and electrically connected to an amplifier, the SE current can be measured as a function of the e-beam position. This scenario is similar to the better-known scanning electron microscopy-based technique, electron beam-induced current imaging, except that the signal in the STEM is generated by the emission of SEs, hence the name secondary electron e-beam-induced current (SEEBIC), and in this case, the current flows in the opposite direction. Here, we provide a brief review of recent work in this area, examine the various contrast generation mechanisms associated with SEEBIC, and illustrate its use for the characterization of graphene nanoribbon devices.",

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Contrast Mechanisms in Secondary Electron e-Beam-Induced Current (SEEBIC) Imaging

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