Continuous Mott transition in semiconductor moiré superlattices

  • Tingxin Li
  • , Shengwei Jiang
  • , Lizhong Li
  • , Yang Zhang
  • , Kaifei Kang
  • , Jiacheng Zhu
  • , Kenji Watanabe
  • , Takashi Taniguchi
  • , Debanjan Chowdhury
  • , Liang Fu
  • , Jie Shan
  • , Kin Fai Mak

Research output: Contribution to journalArticlepeer-review

284 Scopus citations

Abstract

The evolution of a Landau Fermi liquid into a non-magnetic Mott insulator with increasing electronic interactions is one of the most puzzling quantum phase transitions in physics1–6. The vicinity of the transition is believed to host exotic states of matter such as quantum spin liquids4–7, exciton condensates8 and unconventional superconductivity1. Semiconductor moiré materials realize a highly controllable Hubbard model simulator on a triangular lattice9–22, providing a unique opportunity to drive a metal–insulator transition (MIT) via continuous tuning of the electronic interactions. Here, by electrically tuning the effective interaction strength in MoTe2/WSe2 moiré superlattices, we observe a continuous MIT at a fixed filling of one electron per unit cell. The existence of quantum criticality is supported by the scaling collapse of the resistance, a continuously vanishing charge gap as the critical point is approached from the insulating side, and a diverging quasiparticle effective mass from the metallic side. We also observe a smooth evolution of the magnetic susceptibility across the MIT and no evidence of long-range magnetic order down to ~5% of the Curie–Weiss temperature. This signals an abundance of low-energy spinful excitations on the insulating side that is further corroborated by the Pomeranchuk effect observed on the metallic side. Our results are consistent with the universal critical theory of a continuous Mott transition in two dimensions4,23.

Original languageEnglish
Pages (from-to)350-354
Number of pages5
JournalNature
Volume597
Issue number7876
DOIs
StatePublished - Sep 16 2021

Funding

Acknowledgements We thank V. Dobrosavljevic, E.-A. Kim, A. H. MacDonald, L. Rademaker and S. Todadri for fruitful discussions. Research was primarily supported by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under award no. DE-SC0019481 (electrical measurements) and award no. DE-SC0018945 (band structure calculations). The study was partially supported by the National Science Foundation (NSF) under DMR-1807810 (magneto-optical measurements) and the US Army Research Office under grant number W911NF-17-1-0605 (device fabrication). Growth of the hBN crystals was supported by the Elemental Strategy Initiative of MEXT, Japan and CREST (JPMJCR15F3), JST. This work made use of the Cornell Center for Materials Research Shared Facilities, which are supported through the NSF MRSEC program (DMR-1719875) and the Cornell NanoScale Facility, an NNCI member supported by NSF Grant NNCI-1542081. D.C. acknowledges support from faculty startup grants at Cornell University; K.F.M. acknowledges support from the David and Lucille Packard Fellowship.

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