TY - GEN
T1 - Conformal growth of textured barium titanate films on patterned silicon wafer
AU - Zhou, Zhi
AU - Patterson, Brendan A.
AU - Bowland, Christopher C.
AU - Malakooti, Mohammad H.
AU - Sodano, Henry A.
N1 - Publisher Copyright:
Copyright © 2016 by ASME.
PY - 2016
Y1 - 2016
N2 - This work presents a fabrication process for the conformal growth of vertically aligned BaTiO3 films on 3-dimensionally patterned silicon waters. The conformal growth is performed through a two-step hydrothermal reaction that enables the direct growth of piezoelectric films on nonplanar architectures while utilizing relatively low synthesis temperatures. Scanning electron microscopy (SEM) is used to show the controllable conversion of TiO2 nanowires to BaTiO3 films and x-ray diffraction (XRD) is used to validate the crystal structures. Tested by a refined piezoresponse force microscopy (PFM) method, the conformal films exhibited a piezoelectric coupling coefficient as high as 100 pm/V. With superior piezoelectric properties and the capability to grow on design specific surfaces, the BaTiO3 conformal films demonstrate high potential for sensors, random access memory, and other microelectromechanical systems.
AB - This work presents a fabrication process for the conformal growth of vertically aligned BaTiO3 films on 3-dimensionally patterned silicon waters. The conformal growth is performed through a two-step hydrothermal reaction that enables the direct growth of piezoelectric films on nonplanar architectures while utilizing relatively low synthesis temperatures. Scanning electron microscopy (SEM) is used to show the controllable conversion of TiO2 nanowires to BaTiO3 films and x-ray diffraction (XRD) is used to validate the crystal structures. Tested by a refined piezoresponse force microscopy (PFM) method, the conformal films exhibited a piezoelectric coupling coefficient as high as 100 pm/V. With superior piezoelectric properties and the capability to grow on design specific surfaces, the BaTiO3 conformal films demonstrate high potential for sensors, random access memory, and other microelectromechanical systems.
UR - http://www.scopus.com/inward/record.url?scp=85013945429&partnerID=8YFLogxK
U2 - 10.1115/SMASIS2016-9073
DO - 10.1115/SMASIS2016-9073
M3 - Conference contribution
AN - SCOPUS:85013945429
T3 - ASME 2016 Conference on Smart Materials, Adaptive Structures and Intelligent Systems, SMASIS 2016
BT - Multifunctional Materials; Mechanics and Behavior of Active Materials; Integrated System Design and Implementation; Structural Health Monitoring
PB - American Society of Mechanical Engineers
T2 - ASME 2016 Conference on Smart Materials, Adaptive Structures and Intelligent Systems, SMASIS 2016
Y2 - 28 September 2016 through 30 September 2016
ER -