Conduction behavior of SrBi2Ta2O9 thin film grown by pulsed laser deposition

Jin Soo Kim; Ill Won Kim; Chang Won Ahn; Tae Kwon Song; Sang Su Kim; Song Xue Chi; Jong Sung Bae; Jung Hyun Jeong

doi:10.1143/JJAP.41.6785

Conduction behavior of SrBi₂Ta₂O₉ thin film grown by pulsed laser deposition

Jin Soo Kim
, Ill Won Kim
, Chang Won Ahn
, Tae Kwon Song
, Sang Su Kim
, Song Xue Chi
, Jong Sung Bae
, Jung Hyun Jeong

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

SrBi₂Ta₂O₉ (SBT) thin films with different Sr and Bi concentrations were prepared on Pt/Ti/SiO₂/Si substrate by the pulsed laser deposition technique. The structural feature and surface morphology were characterized by X-ray diffraction and SEM studies. The ferroelectricity was confirmed by polarization-electric field (P-E) hysteresis loops. The measured value of remanent polarization (2P_r,) of Bi-excess SBT film was 14.3 μC/cm² with a coercive field (2E _c) of 101 kV/cm at the applied voltage of 4 V. The dielectric constant and the ac conductivity of the Pt/SBT/Pt capacitor were investigated in the frequency range of 0.1 Hz-100kHz and the temperature range of 25°C-400°C. From the slope of ac conductivity vs. 1/T plot, the activation energy was calculated to be 0.86 eV at the lowest frequency and high temperature range. Also electrical properties were investigated by current-voltage (I-V) measurements as a function of applied electric fields. To determine the influence of Sr and Bi concentrations on the SBT/Pt junction, the ferroelectric properties and conduction behavior of SBT thin films are discussed.

Original language	English
Pages (from-to)	6785-6789
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	11 B
DOIs	https://doi.org/10.1143/JJAP.41.6785
State	Published - Nov 2002
Externally published	Yes

Keywords

Ferroelectric
I-V
Leakage current
P-E hysteresis loop
Remanent polarization
SBT

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10.1143/JJAP.41.6785

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title = "Conduction behavior of SrBi2Ta2O9 thin film grown by pulsed laser deposition",

abstract = "SrBi2Ta2O9 (SBT) thin films with different Sr and Bi concentrations were prepared on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition technique. The structural feature and surface morphology were characterized by X-ray diffraction and SEM studies. The ferroelectricity was confirmed by polarization-electric field (P-E) hysteresis loops. The measured value of remanent polarization (2Pr,) of Bi-excess SBT film was 14.3 μC/cm2 with a coercive field (2E c) of 101 kV/cm at the applied voltage of 4 V. The dielectric constant and the ac conductivity of the Pt/SBT/Pt capacitor were investigated in the frequency range of 0.1 Hz-100kHz and the temperature range of 25°C-400°C. From the slope of ac conductivity vs. 1/T plot, the activation energy was calculated to be 0.86 eV at the lowest frequency and high temperature range. Also electrical properties were investigated by current-voltage (I-V) measurements as a function of applied electric fields. To determine the influence of Sr and Bi concentrations on the SBT/Pt junction, the ferroelectric properties and conduction behavior of SBT thin films are discussed.",

keywords = "Ferroelectric, I-V, Leakage current, P-E hysteresis loop, Remanent polarization, SBT",

author = "Kim, \{Jin Soo\} and Kim, \{Ill Won\} and Ahn, \{Chang Won\} and Song, \{Tae Kwon\} and Kim, \{Sang Su\} and Chi, \{Song Xue\} and Bae, \{Jong Sung\} and Jeong, \{Jung Hyun\}",

year = "2002",

month = nov,

doi = "10.1143/JJAP.41.6785",

language = "English",

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pages = "6785--6789",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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}

TY - JOUR

T1 - Conduction behavior of SrBi2Ta2O9 thin film grown by pulsed laser deposition

AU - Kim, Jin Soo

AU - Kim, Ill Won

AU - Ahn, Chang Won

AU - Song, Tae Kwon

AU - Kim, Sang Su

AU - Chi, Song Xue

AU - Bae, Jong Sung

AU - Jeong, Jung Hyun

PY - 2002/11

Y1 - 2002/11

N2 - SrBi2Ta2O9 (SBT) thin films with different Sr and Bi concentrations were prepared on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition technique. The structural feature and surface morphology were characterized by X-ray diffraction and SEM studies. The ferroelectricity was confirmed by polarization-electric field (P-E) hysteresis loops. The measured value of remanent polarization (2Pr,) of Bi-excess SBT film was 14.3 μC/cm2 with a coercive field (2E c) of 101 kV/cm at the applied voltage of 4 V. The dielectric constant and the ac conductivity of the Pt/SBT/Pt capacitor were investigated in the frequency range of 0.1 Hz-100kHz and the temperature range of 25°C-400°C. From the slope of ac conductivity vs. 1/T plot, the activation energy was calculated to be 0.86 eV at the lowest frequency and high temperature range. Also electrical properties were investigated by current-voltage (I-V) measurements as a function of applied electric fields. To determine the influence of Sr and Bi concentrations on the SBT/Pt junction, the ferroelectric properties and conduction behavior of SBT thin films are discussed.

AB - SrBi2Ta2O9 (SBT) thin films with different Sr and Bi concentrations were prepared on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition technique. The structural feature and surface morphology were characterized by X-ray diffraction and SEM studies. The ferroelectricity was confirmed by polarization-electric field (P-E) hysteresis loops. The measured value of remanent polarization (2Pr,) of Bi-excess SBT film was 14.3 μC/cm2 with a coercive field (2E c) of 101 kV/cm at the applied voltage of 4 V. The dielectric constant and the ac conductivity of the Pt/SBT/Pt capacitor were investigated in the frequency range of 0.1 Hz-100kHz and the temperature range of 25°C-400°C. From the slope of ac conductivity vs. 1/T plot, the activation energy was calculated to be 0.86 eV at the lowest frequency and high temperature range. Also electrical properties were investigated by current-voltage (I-V) measurements as a function of applied electric fields. To determine the influence of Sr and Bi concentrations on the SBT/Pt junction, the ferroelectric properties and conduction behavior of SBT thin films are discussed.

KW - Ferroelectric

KW - I-V

KW - Leakage current

KW - P-E hysteresis loop

KW - Remanent polarization

KW - SBT

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M3 - Article

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JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 11 B

ER -

Conduction behavior of SrBi₂Ta₂O₉ thin film grown by pulsed laser deposition

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Keywords

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