Conduction behavior of SrBi2Ta2O9 thin film grown by pulsed laser deposition

Jin Soo Kim; Ill Won Kim; Chang Won Ahn; Tae Kwon Song; Sang Su Kim; Song Xue Chi; Jong Sung Bae; Jung Hyun Jeong

doi:10.1143/JJAP.41.6785

Conduction behavior of SrBi₂Ta₂O₉ thin film grown by pulsed laser deposition

Jin Soo Kim, Ill Won Kim, Chang Won Ahn, Tae Kwon Song, Sang Su Kim, Song Xue Chi, Jong Sung Bae, Jung Hyun Jeong

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

SrBi₂Ta₂O₉ (SBT) thin films with different Sr and Bi concentrations were prepared on Pt/Ti/SiO₂/Si substrate by the pulsed laser deposition technique. The structural feature and surface morphology were characterized by X-ray diffraction and SEM studies. The ferroelectricity was confirmed by polarization-electric field (P-E) hysteresis loops. The measured value of remanent polarization (2P_r,) of Bi-excess SBT film was 14.3 μC/cm² with a coercive field (2E _c) of 101 kV/cm at the applied voltage of 4 V. The dielectric constant and the ac conductivity of the Pt/SBT/Pt capacitor were investigated in the frequency range of 0.1 Hz-100kHz and the temperature range of 25°C-400°C. From the slope of ac conductivity vs. 1/T plot, the activation energy was calculated to be 0.86 eV at the lowest frequency and high temperature range. Also electrical properties were investigated by current-voltage (I-V) measurements as a function of applied electric fields. To determine the influence of Sr and Bi concentrations on the SBT/Pt junction, the ferroelectric properties and conduction behavior of SBT thin films are discussed.

Original language	English
Pages (from-to)	6785-6789
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	11 B
DOIs	https://doi.org/10.1143/JJAP.41.6785
State	Published - Nov 2002
Externally published	Yes

Keywords

Ferroelectric
I-V
Leakage current
P-E hysteresis loop
Remanent polarization
SBT

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@article{eeb7bdf4e03446f48b96367a05ec039c,

title = "Conduction behavior of SrBi2Ta2O9 thin film grown by pulsed laser deposition",

abstract = "SrBi2Ta2O9 (SBT) thin films with different Sr and Bi concentrations were prepared on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition technique. The structural feature and surface morphology were characterized by X-ray diffraction and SEM studies. The ferroelectricity was confirmed by polarization-electric field (P-E) hysteresis loops. The measured value of remanent polarization (2Pr,) of Bi-excess SBT film was 14.3 μC/cm2 with a coercive field (2E c) of 101 kV/cm at the applied voltage of 4 V. The dielectric constant and the ac conductivity of the Pt/SBT/Pt capacitor were investigated in the frequency range of 0.1 Hz-100kHz and the temperature range of 25°C-400°C. From the slope of ac conductivity vs. 1/T plot, the activation energy was calculated to be 0.86 eV at the lowest frequency and high temperature range. Also electrical properties were investigated by current-voltage (I-V) measurements as a function of applied electric fields. To determine the influence of Sr and Bi concentrations on the SBT/Pt junction, the ferroelectric properties and conduction behavior of SBT thin films are discussed.",

keywords = "Ferroelectric, I-V, Leakage current, P-E hysteresis loop, Remanent polarization, SBT",

author = "Kim, {Jin Soo} and Kim, {Ill Won} and Ahn, {Chang Won} and Song, {Tae Kwon} and Kim, {Sang Su} and Chi, {Song Xue} and Bae, {Jong Sung} and Jeong, {Jung Hyun}",

year = "2002",

month = nov,

doi = "10.1143/JJAP.41.6785",

language = "English",

volume = "41",

pages = "6785--6789",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing",

number = "11 B",

}

TY - JOUR

T1 - Conduction behavior of SrBi2Ta2O9 thin film grown by pulsed laser deposition

AU - Kim, Jin Soo

AU - Kim, Ill Won

AU - Ahn, Chang Won

AU - Song, Tae Kwon

AU - Kim, Sang Su

AU - Chi, Song Xue

AU - Bae, Jong Sung

AU - Jeong, Jung Hyun

PY - 2002/11

Y1 - 2002/11

N2 - SrBi2Ta2O9 (SBT) thin films with different Sr and Bi concentrations were prepared on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition technique. The structural feature and surface morphology were characterized by X-ray diffraction and SEM studies. The ferroelectricity was confirmed by polarization-electric field (P-E) hysteresis loops. The measured value of remanent polarization (2Pr,) of Bi-excess SBT film was 14.3 μC/cm2 with a coercive field (2E c) of 101 kV/cm at the applied voltage of 4 V. The dielectric constant and the ac conductivity of the Pt/SBT/Pt capacitor were investigated in the frequency range of 0.1 Hz-100kHz and the temperature range of 25°C-400°C. From the slope of ac conductivity vs. 1/T plot, the activation energy was calculated to be 0.86 eV at the lowest frequency and high temperature range. Also electrical properties were investigated by current-voltage (I-V) measurements as a function of applied electric fields. To determine the influence of Sr and Bi concentrations on the SBT/Pt junction, the ferroelectric properties and conduction behavior of SBT thin films are discussed.

AB - SrBi2Ta2O9 (SBT) thin films with different Sr and Bi concentrations were prepared on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition technique. The structural feature and surface morphology were characterized by X-ray diffraction and SEM studies. The ferroelectricity was confirmed by polarization-electric field (P-E) hysteresis loops. The measured value of remanent polarization (2Pr,) of Bi-excess SBT film was 14.3 μC/cm2 with a coercive field (2E c) of 101 kV/cm at the applied voltage of 4 V. The dielectric constant and the ac conductivity of the Pt/SBT/Pt capacitor were investigated in the frequency range of 0.1 Hz-100kHz and the temperature range of 25°C-400°C. From the slope of ac conductivity vs. 1/T plot, the activation energy was calculated to be 0.86 eV at the lowest frequency and high temperature range. Also electrical properties were investigated by current-voltage (I-V) measurements as a function of applied electric fields. To determine the influence of Sr and Bi concentrations on the SBT/Pt junction, the ferroelectric properties and conduction behavior of SBT thin films are discussed.

KW - Ferroelectric

KW - I-V

KW - Leakage current

KW - P-E hysteresis loop

KW - Remanent polarization

KW - SBT

UR - http://www.scopus.com/inward/record.url?scp=1342321216&partnerID=8YFLogxK

U2 - 10.1143/JJAP.41.6785

DO - 10.1143/JJAP.41.6785

M3 - Article

AN - SCOPUS:1342321216

SN - 0021-4922

VL - 41

SP - 6785

EP - 6789

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 11 B

ER -

Conduction behavior of SrBi₂Ta₂O₉ thin film grown by pulsed laser deposition

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